component
G450P15M
Public Made by Adomby adom
GOFORD MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 9d ago |
| viewers | 9d ago |
| g450p15m-etched.glb | 9d ago |
| g450p15m-etched.step | 9d ago |
| g450p15m-hero.glb | 9d ago |
| g450p15m-hero.overlay.json | 9d ago |
| g450p15m.glb | 9d ago |
| g450p15m.kicad_mod | 9d ago |
| g450p15m.kicad_sym | 9d ago |
| g450p15m.lbr | 9d ago |
| g450p15m.step | 9d ago |
| package.json | 9d ago |
| page.json | 9d ago |
| README.md | 9d ago |
G450P15M
GOFORD · MOSFETs · TO-263
G450P15M from GOFORD, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum VGS of ±20 V and threshold VGS(th) of -1.0 to -4.0 V at ID = -250µA. |
| 2 | D | passive | Drain (middle lead, shorter in the drawing); rated VDS -150 V and continuous ID -120 A, with RDS(on) below 45 mΩ at VGS = -10 V. |
| 3 | S | passive | Source; body diode conducts continuous IS of -120 A with VSD at most -1.2 V at ISD = -30A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -150 | V | 1 | |||
| Continuous Drain Current | ID | -120 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | -480 | A | Note 1: pulse width limited by maximum junction temperature | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Power Dissipation | PD | 200 | W | TC = 25ºC | 1 | ||
| Single pulse avalanche energy | EAS | 440 | mJ | Note 2: Tj=25℃, VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 50 | ºC/W | 1 | |||
| Maximum Junction-to-Case | RthJC | 0.63 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -150 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS = -150V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2.5 | -4 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 33 | 45 | mΩ | VGS = -10V, ID = -30A | 2 | |
| Continuous Body Diode Current | IS | -120 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -30A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
G450P15M - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
g450p15m-etched.step/g450p15m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g450p15m.step/g450p15m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
a0827882882c2162, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).