component

G450P04K

Public Made by Adom

by adom

GOFORD MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsg450p04kfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
g450p04k / README.md
History Download
Ray Publish 0.1.0 4ee1d7d 18d ago

G450P04K

GOFORD · MOSFETs · TO-252

G450P04K from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold -1 V to -2.5 V at ID = -250 µA.
2 D passive Drain, the shortened centre lead and the exposed tab; drain-source voltage -40 V, continuous drain current -11 A.
3 S passive Source; body diode continuous current -11 A, forward voltage up to -1.2 V at ISD = -6 A.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -40 V TC = 25ºC 1
Continuous Drain Current ID -11 A TC = 25ºC 1
Pulsed Drain Current IDM -44 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 48 W TC = 25ºC 1
Single pulse avalanche energy EAS 12 mJ Tj=25℃, VDD=-40V, VGS=-10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W 1
Maximum Junction-to-Case RthJC 2.6 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS -40 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -40V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 32 40 mΩ VGS = -10V, ID = -6A 2
Drain-Source On-Resistance RDS(on) 45 55 mΩ VGS = -4.5V, ID = -6A 2
Continuous Body Diode Current IS -11 A TC = 25ºC 2
Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -6A, VGS = 0V 2
Forward Transconductance gFS 11 S VDS = -5V, ID = -6A 2
Input Capacitance Ciss 983 pF VGS = 0V, VDS = -20V, f = 1.0MHz 2
Output Capacitance Coss 87 pF VGS = 0V, VDS = -20V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 80 pF VGS = 0V, VDS = -20V, f = 1.0MHz 2
Total Gate Charge Qg 25 nC VDD = -20V, ID = -6A, VGS = -10V 2
Gate-Source Charge Qgs 3 nC VDD = -20V, ID = -6A, VGS = -10V 2
Gate-Drain Charge Qgd 7 nC VDD = -20V, ID = -6A, VGS = -10V 2
Turn-on Delay Time td(on) 8 ns VDD = -20V, ID = -6A, RG = 3Ω 2
Turn-on Rise Time tr 4 ns VDD = -20V, ID = -6A, RG = 3Ω 2
Turn-off Delay Time td(off) 32 ns VDD = -20V, ID = -6A, RG = 3Ω 2
Turn-off Fall Time tf 7 ns VDD = -20V, ID = -6A, RG = 3Ω 2
Reverse Recovery Charge Qrr 31 nC IF = -6A, VGS = 0V, di/dt=-100A/us 2
Reverse Recovery Time Trr 25 ns IF = -6A, VGS = 0V, di/dt=-100A/us 2

CAD (KiCad official)

  • Symbol: G450P04K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: g450p04k-etched.step / g450p04k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g450p04k.step / g450p04k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 e2724dd4224c7440, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF