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G3R60MT07K
Public Made by Adomby adom
Navitas Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownG3R60MT07K
Navitas · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4
G3R60MT07K from Navitas, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, also connected to the case/tab; rated for V_DS(max) = 750 V and continuous current of 49 A at Tc = 25°C (V_GS = -5/+18 V). |
| 2 | S | passive | Power Source pin carrying the main drain current, not interchangeable with the Kelvin Source pin. |
| 3 | KS | passive | Kelvin Source pin used as the gate-drive return, not interchangeable with the power Source pin. |
| 4 | G | input | Gate; recommended drive is +15 to +18 V on and -5 to -3 V off, with an absolute maximum of -10/+22 V (dynamic). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Navitas |
| Package | TO-247-4 |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS(max) | 750 | V | VGS = 0 V, ID = 100 µA | 1 | ||
| Gate-Source Voltage (Dynamic) | VGS(max) | -10 | 22 | V | 1 | ||
| Gate-Source Voltage Recommended Turn-On | VGS(op)-ON | 15 | 18 | V | Static, recommended operation | 1 | |
| Gate-Source Voltage Recommended Turn-Off | VGS(op)-OFF | -5 | -3 | V | Static, recommended operation | 1 | |
| Continuous Forward Current | ID | 49 | A | TC = 25°C, VGS = -5/+18 V | 1 | ||
| Continuous Forward Current | ID | 34 | A | TC = 100°C, VGS = -5/+18 V | 1 | ||
| Continuous Forward Current | ID | 25 | A | TC = 135°C, VGS = -5/+18 V | 1 | ||
| Continuous Forward Current | ID | 48 | A | TC = 25°C, VGS = -5/+15 V | 1 | ||
| Pulsed Drain Current | ID(pulse) | 100 | A | tP ≤ 3µs, D ≤ 1%, VGS = 15 V, Note 1 | 1 | ||
| Power Dissipation | PD | 185 | W | TC = 25°C | 1 | ||
| Non-Repetitive Avalanche Energy | EAS | 250 | mJ | L = 8.9 mH, IAS = 7.5 A | 1 | ||
| Operating and Storage Temperature | Tj, Tstg | -55 | 175 | °C | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 750 | V | VGS = 0 V, ID = 100 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 100 | µA | VDS = 750 V, VGS = 0 V | 2 | |
| Gate Source Leakage Current | IGSS | 100 | nA | VDS = 0 V, VGS = 22 V | 2 | ||
| Gate Source Leakage Current | IGSS | -100 | nA | VDS = 0 V, VGS = -10 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.8 | 2.5 | V | VDS = VGS, ID = 8 mA | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | V | VDS = VGS, ID = 8 mA, Tj = 175°C | 2 | ||
| Transconductance | gfs | 7.8 | S | VDS = 10 V, ID = 15 A | 2 | ||
| Transconductance | gfs | 8.6 | S | VDS = 10 V, ID = 15 A, Tj = 175°C | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 60 | mΩ | VGS = 15 V, ID = 15 A | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 72 | mΩ | VGS = 15 V, ID = 15 A, Tj = 175°C | 2 | ||
| Drain-Source On-State Resistance | RDS(ON) | 45 | 62 | mΩ | VGS = 18 V, ID = 15 A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 61 | mΩ | VGS = 18 V, ID = 15 A, Tj = 175°C | 2 | ||
| Input Capacitance | Ciss | 1136 | pF | VDS = 450 V, VGS = 0 V, f = 1 MHz, VAC = 25mV | 2 | ||
| Output Capacitance | Coss | 107 | pF | VDS = 450 V, VGS = 0 V, f = 1 MHz, VAC = 25mV | 2 | ||
| Reverse Transfer Capacitance | Crss | 9.4 | pF | VDS = 450 V, VGS = 0 V, f = 1 MHz, VAC = 25mV | 2 | ||
| Internal Gate Resistance | RG(int) | 1 | Ω | f = 1 MHz, VAC = 25 mV | 2 | ||
| Diode Forward Voltage | VSD | 4.2 | V | VGS = -5 V, ISD = 7 A | 3 | ||
| Diode Forward Voltage | VSD | 3.8 | V | VGS = -5 V, ISD = 7 A, Tj = 175°C | 3 | ||
| Continuous Diode Forward Current | IS | 17 | A | VGS = -5 V, TC = 100°C | 3 | ||
| Diode Pulse Current | IS(pulse) | 68 | A | VGS = -5 V, Note 1 | 3 | ||
| Thermal Resistance, Junction - Case | RthJC | 0.81 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
G3R60MT07K - Footprint:
Package_TO_SOT_THT:TO-247-4_Vertical - 3D model: TO-247-4 (KiCad packages3D, STEP)
- 3D model files:
g3r60mt07k-etched.step/g3r60mt07k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g3r60mt07k.step/g3r60mt07k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Navitas datasheet (14 pp, sha256
d4b7238b1236cb1c, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).