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G3R60MT07D

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Navitas Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentsilicon carbide (sic) devicesg3r60mt07dfactory-2.0.0extractor-text

Verified G3R60MT07D

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: G3R60MT07D · TO-247-3 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 14-page datasheet
  • ✓distributor: lcsc C25836777, digikey 1913-G3R60MT07D-ND, mouser 905-G3R60MT07D
  • ✓family: TO-247-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-qam_5rb5/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ g3r60mt07d.kicad_sym✓ g3r60mt07d.kicad_mod✓ g3r60mt07d.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 5d ago
viewers g3r60mt07d: viewers · Ray 5d ago
g3r60mt07d-etched.glb Publish 0.1.0 · Ray 5d ago
g3r60mt07d-etched.step g3r60mt07d: factory component page (tier=lcsc) · Ray 5d ago
g3r60mt07d-hero.glb g3r60mt07d: hero GLB from the etched model (keeps the MPN mark) · Ray 5d ago
g3r60mt07d-hero.overlay.json Publish 0.1.0 · Ray 5d ago
g3r60mt07d.glb Publish 0.1.0 · Ray 5d ago
g3r60mt07d.kicad_mod Publish 0.1.0 · Ray 5d ago
g3r60mt07d.kicad_sym Publish 0.1.0 · Ray 5d ago
g3r60mt07d.lbr Publish 0.1.0 · Ray 5d ago
g3r60mt07d.step Publish 0.1.0 · Ray 5d ago
package.json Publish 0.1.0 · Ray 5d ago
page.json Set visibility: public · Ray 5d ago
README.md Publish 0.1.0 · Ray 5d ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 5d ago

G3R60MT07D

Navitas · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3

G3R60MT07D from Navitas, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; recommended drive is -5 V / +15 V, with an absolute maximum of -10 V / +20 V gate-source.
2 D passive Drain, rated 750 V maximum drain-source and connected internally to the case (tab).
3 S passive Source, the power return of the N-channel SiC MOSFET, which carries up to 43 A continuous at TC = 25°C.

Key specifications

Parameter Value
Manufacturer Navitas
Package TO-247-3
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS(max) 750 V VGS = 0 V, ID = 100 µA 1
Gate-Source Voltage (Dynamic) VGS(max) -10 20 V 1
Gate-Source Voltage (Static) VGS(op) -5 15 V Recommended Operation 1
Continuous Forward Current ID 43 A TC = 25°C, VGS = -5 / +15 V 1
Continuous Forward Current ID 30 A TC = 100°C, VGS = -5 / +15 V 1
Continuous Forward Current ID 22 A TC = 135°C, VGS = -5 / +15 V 1
Pulsed Drain Current ID(pulse) 100 A tP ≤ 3µs, D ≤ 1%, VGS = 15 V, Note 1 1
Power Dissipation PD 171 W TC = 25°C 1
Non-Repetitive Avalanche Energy EAS 210 mJ L = 7.5 mH, IAS = 7.5 A 1
Operating and Storage Temperature Tj, Tstg -55 175 °C 1
Thermal Resistance, Junction - Case RthJC 0.68 0.88 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS 750 V VGS = 0 V, ID = 100 µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 750 V, VGS = 0 V 2
Gate Source Leakage Current IGSS 100 nA VDS = 0 V, VGS = 20 V 2
Gate Source Leakage Current IGSS -100 nA VDS = 0 V, VGS = -10 V 2
Gate Threshold Voltage VGS(th) 1.8 2.5 V VDS = VGS, ID = 8.0 mA 2
Gate Threshold Voltage VGS(th) 2 V VDS = VGS, ID = 8.0 mA, Tj = 175°C 2
Drain-Source On-State Resistance RDS(ON) 60 78 mΩ VGS = 15 V, ID = 15 A 2
Drain-Source On-State Resistance RDS(ON) 72 mΩ VGS = 15 V, ID = 15 A, Tj = 175°C 2
Transconductance gfs 7.8 S VDS = 10 V, ID = 15 A 2
Transconductance gfs 8.6 S VDS = 10 V, ID = 15 A, Tj = 175°C 2
Input Capacitance Ciss 953 pF VDS = 450 V, VGS = 0 V, f = 1 MHz, VAC = 25mV 2
Output Capacitance Coss 90 pF VDS = 450 V, VGS = 0 V, f = 1 MHz, VAC = 25mV 2
Reverse Transfer Capacitance Crss 7.9 pF VDS = 450 V, VGS = 0 V, f = 1 MHz, VAC = 25mV 2
Coss Stored Energy Eoss 10 µJ 2
Coss Stored Charge QC 59 nC 2
Effective Output Capacitance (Energy Related) Co(er) 98 pF Note 2 2
Effective Output Capacitance (Time Related) Co(tr) 131 pF Note 2 2
Gate-Source Charge Qgs 13 nC VDS = 450 V, VGS = -5 / +15 V, ID = 15 A 2
Gate-Drain Charge Qgd 16 nC VDS = 450 V, VGS = -5 / +15 V, ID = 15 A 2
Total Gate Charge Qg 47 nC VDS = 450 V, VGS = -5 / +15 V, ID = 15 A 2
Internal Gate Resistance RG(int) 1 Ω f = 1 MHz, VAC = 25 mV 2
Turn-On Switching Energy (Body Diode) EOn 84 µJ Tj = 25°C, VGS = -5/+15V, RG(ext) = 3 Ω, L = 60.0 µH, ID = 15 A, VDD = 450 V 2
Turn-Off Switching Energy (Body Diode) EOff 15 µJ Tj = 25°C, VGS = -5/+15V, RG(ext) = 3 Ω, L = 60.0 µH, ID = 15 A, VDD = 450 V 2
Turn-On Delay Time td(on) 20 ns VDD = 450 V, VGS = -5/+15V, RG(ext) = 3 Ω, L = 60.0 µH, ID = 15 A, inductive load 2
Rise Time tr 7 ns VDD = 450 V, VGS = -5/+15V, RG(ext) = 3 Ω, L = 60.0 µH, ID = 15 A, inductive load 2
Turn-Off Delay Time td(off) 8 ns VDD = 450 V, VGS = -5/+15V, RG(ext) = 3 Ω, L = 60.0 µH, ID = 15 A, inductive load 2
Fall Time tf 5 ns VDD = 450 V, VGS = -5/+15V, RG(ext) = 3 Ω, L = 60.0 µH, ID = 15 A, inductive load 2
Diode Forward Voltage VSD 4.4 V VGS = -5 V, ISD = 7 A 3
Diode Forward Voltage VSD 3.9 V VGS = -5 V, ISD = 7 A, Tj = 175°C 3
Continuous Diode Forward Current IS 16 A VGS = -5 V, TC = 100°C 3
Diode Pulse Current IS(pulse) 64 A VGS = -5 V, Note 1 3
Reverse Recovery Time trr 24 ns VGS = -5 V, ISD = 15 A, VR = 450 V, dif/dt = 800 A/µs, Tj = 25°C 3
Reverse Recovery Charge Qrr 102 nC VGS = -5 V, ISD = 15 A, VR = 450 V, dif/dt = 800 A/µs, Tj = 25°C 3
Peak Reverse Recovery Current Irrm 6 A VGS = -5 V, ISD = 15 A, VR = 450 V, dif/dt = 800 A/µs, Tj = 25°C 3
Reverse Recovery Time trr 26 ns VGS = -5 V, ISD = 15 A, VR = 450 V, dif/dt = 800 A/µs, Tj = 175°C 3
Reverse Recovery Charge Qrr 155 nC VGS = -5 V, ISD = 15 A, VR = 450 V, dif/dt = 800 A/µs, Tj = 175°C 3
Peak Reverse Recovery Current Irrm 9 A VGS = -5 V, ISD = 15 A, VR = 450 V, dif/dt = 800 A/µs, Tj = 175°C 3

CAD (KiCad official)

  • Symbol: G3R60MT07D
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: g3r60mt07d-etched.step / g3r60mt07d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g3r60mt07d.step / g3r60mt07d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Navitas datasheet (14 pp, sha256 b257d36c59f47199, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF