component
G3400L-B
Public Made by Adomby adom
GOFORD MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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| g3400l-b-etched.step | 17d ago |
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G3400L-B
GOFORD · MOSFETs · SOT-23-3L
G3400L-B from GOFORD, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V absolute maximum, with VGS(th) of 0.7 V min, 0.9 V typ and 1.4 V max at ID=250 µA, and operation with gate voltages as low as 2.5 V. |
| 2 | S | passive | Source of the N-channel MOSFET; continuous drain current is 5.8 A and body-diode forward current is 2.9 A max. |
| 3 | D | passive | Drain; drain-source voltage is 25 V max, continuous drain current 5.8 A and pulsed drain current 30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 25 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | 5.8 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed (Note 1) | IDM | 30 | A | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1.4 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | TA=25℃ | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 25 | 33 | V | VGS=0V ID=250μA | 1 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=25V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.7 | 0.9 | 1.4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 45 | 5 | mΩ | VGS=2.5V, ID=4A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 31 | 4 | mΩ | VGS=4.5V, ID=2.9A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 28 | 35 | mΩ | VGS=10V, ID=2.9A | 2 | |
| Forward Transconductance | gFS | 10 | S | VDS=5V,ID=2.9A | 2 | ||
| Diode Forward Voltage (Note 3) | VSD | 0.75 | 1.2 | V | VGS=0V,IS=2.9A | 2 | |
| Diode Forward Current (Note 2) | IS | 2.9 | A | 2 | |||
| Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA | 1 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec | 1 |
CAD (KiCad official)
- Symbol:
G3400L-B - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
g3400l-b-etched.step/g3400l-b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g3400l-b.step/g3400l-b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (4 pp, sha256
83beab62fbedfda7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).