# G300C03L6

**GOFORD** · MOSFETs · SOT-23-6L

G300C03L6 from GOFORD, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (NMOS), with VGS rated ±12 V and threshold 0.7 to 1.3 V. |
| 2 | S2 | passive | Source of the P-channel MOSFET (PMOS), with VDS rated -30 V and continuous drain current -4.2 A. |
| 3 | G2 | input | Gate of the P-channel MOSFET (PMOS), with VGS rated ±12 V and threshold -0.6 to -1.3 V. |
| 4 | D2 | passive | Drain of the P-channel MOSFET (PMOS), with VDS rated -30 V and pulsed drain current -16.8 A. |
| 5 | S1 | passive | Source of the N-channel MOSFET (NMOS), with VDS rated 30 V and continuous drain current 5.6 A. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (NMOS), with VDS rated 30 V and pulsed drain current 22.4 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23-6L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (NMOS) | VDS |  |  | 30 | V | TC = 25ºC, unless otherwise noted | 1 |
| Drain-Source Voltage (PMOS) | VDS |  |  | -30 | V | TC = 25ºC, unless otherwise noted | 1 |
| Continuous Drain Current (NMOS) | ID |  |  | 5.6 | A | TC = 25ºC, unless otherwise noted | 1 |
| Continuous Drain Current (PMOS) | ID |  |  | -4.2 | A | TC = 25ºC, unless otherwise noted | 1 |
| Pulsed Drain Current (NMOS) | IDM |  |  | 22.4 | A | TC = 25ºC, unless otherwise noted; note 1 repetitive rating | 1 |
| Pulsed Drain Current (PMOS) | IDM |  |  | -16.8 | A | TC = 25ºC, unless otherwise noted; note 1 repetitive rating | 1 |
| Gate-Source Voltage (NMOS) | VGS | -12 |  | 12 | V | TC = 25ºC, unless otherwise noted | 1 |
| Gate-Source Voltage (PMOS) | VGS | -12 |  | 12 | V | TC = 25ºC, unless otherwise noted | 1 |
| Power Dissipation (NMOS) | PD |  |  | 1.4 | W | TC = 25ºC, unless otherwise noted | 1 |
| Power Dissipation (PMOS) | PD |  |  | 1.2 | W | TC = 25ºC, unless otherwise noted | 1 |
| Single pulse avalanche energy (NMOS) | EAS |  |  | 10 | mJ | note 2: Tj=25℃, VDD=30V, VGS=10V, L=0.5mH, Rg=25Ω | 1 |
| Single pulse avalanche energy (PMOS) | EAS |  |  | 14 | mJ | note 2: Tj=25℃, VDD=-30V, VGS=-10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC |  | 1 |
| Drain-Source Breakdown Voltage (NMOS) | V(BR)DSS | 30 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current (NMOS) | IDSS |  |  | 1 | μA | VDS = 30V, VGS = 0V | 2 |
| Gate-Source Leakage (NMOS) | IGSS | -100 |  | 100 | nA | VGS = ±12V | 2 |
| Gate-Source Threshold Voltage (NMOS) | VGS(th) | 0.7 | 1 | 1.3 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance (NMOS) | RDS(on) |  | 22 | 27 | mΩ | VGS = 10V, ID = 3A | 2 |
| Drain-Source On-Resistance (NMOS) | RDS(on) |  | 25 | 30 | mΩ | VGS = 4.5V, ID = 3A | 2 |
| Drain-Source On-Resistance (NMOS) | RDS(on) |  | 38 | 65 | mΩ | VGS = 2.5V, ID = 2A | 2 |
| Continuous Body Diode Current (NMOS) | IS |  |  | 5.6 | A | TC = 25ºC | 2 |
| Body Diode Voltage (NMOS) | VSD |  |  | 1.2 | V | TJ = 25ºC, ISD =3A, VGS = 0V | 2 |
| Drain-Source Breakdown Voltage (PMOS) | V(BR)DSS | -30 |  |  | V | VGS = 0V, ID = -250µA | 6 |
| Zero Gate Voltage Drain Current (PMOS) | IDSS |  |  | -1 | μA | VDS = -30V, VGS = 0V | 6 |
| Gate-Source Leakage (PMOS) | IGSS | -100 |  | 100 | nA | VGS = ±12V | 6 |
| Gate-Source Threshold Voltage (PMOS) | VGS(th) | -0.6 | -0.8 | -1.3 | V | VDS = VGS, ID = -250µA | 6 |
| Drain-Source On-Resistance (PMOS) | RDS(on) |  | 43 | 55 | mΩ | VGS = -10V, ID = -3A | 6 |
| Drain-Source On-Resistance (PMOS) | RDS(on) |  | 51 | 65 | mΩ | VGS = -4.5V, ID = -3A | 6 |
| Drain-Source On-Resistance (PMOS) | RDS(on) |  | 68 | 90 | mΩ | VGS = -2.5V, ID = -2A | 6 |
| Continuous Body Diode Current (PMOS) | IS |  |  | -4.2 | A | TC = 25ºC | 6 |
| Body Diode Voltage (PMOS) | VSD |  |  | -1.2 | V | TJ = 25ºC, ISD = -4A, VGS = 0V | 6 |
| Thermal Resistance, Junction-to-Ambient (NMOS) | RthJA |  | 89 |  | ºC/W |  | 1 |
| Thermal Resistance, Junction-to-Ambient (PMOS) | RthJA |  | 104 |  | ºC/W |  | 1 |

## CAD (KiCad official)

- Symbol: `G300C03L6`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `g300c03l6-etched.step` / `g300c03l6-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g300c03l6.step` / `g300c03l6.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GOFORD datasheet](docs/g300c03l6-datasheet.pdf) (10 pp, sha256 `cf2e6711be14468f`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/g300c03l6-datasheet.pdf)