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G26N02K

Public Made by Adom

by adom

GOFORD MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 9h ago
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G26N02K

GOFORD · MOSFETs · TO-252

G26N02K from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, VGS limited to ±12 V with threshold of 0.5 V min to 0.9 V max at 250 µA.
2 D passive Drain, the center position and the exposed tab; VDS 20 V max, continuous ID 26 A and pulsed IDM 100 A.
3 S passive Source; continuous body diode current 26 A at TC = 25ºC.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V TC = 25ºC 1
Continuous Drain Current ID 26 A TC = 25ºC 1
Pulsed Drain Current IDM 100 A TC = 25ºC 1
Gate-Source Voltage VGS -12 12 V TC = 25ºC 1
Single Pulse Avalanche Energy EAS 43 mJ VDD = 20V, RG = 25Ω, L=0.5 mH, Starting TJ = 25°C 1
Power Dissipation PD 33 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Case RthJC 3.8 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 20V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±12V 2
Gate-Source Threshold Voltage VGS(th) 0.5 0.7 0.9 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 9 11.3 mΩ VGS = 4.5V, ID = 3A 2
Drain-Source On-Resistance RDS(on) 11 14.1 mΩ VGS = 2.5V, ID = 3A 2
Forward Transconductance gFS 10 S VDS=5V,ID=3A 2
Continuous Body Diode Current IS 26 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 3A, VGS = 0V 2
Input Capacitance Ciss 777 pF VGS = 0V, VDS = 10V, f = 1.0MHz 2
Output Capacitance Coss 164 pF VGS = 0V, VDS = 10V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 140 pF VGS = 0V, VDS = 10V, f = 1.0MHz 2
Total Gate Charge Qg 26 nC VDD = 10V, ID = 3A, VGS = 4.5V 2
Gate-Source Charge Qgs 3 nC VDD = 10V, ID = 3A, VGS = 4.5V 2
Gate-Drain Charge Qgd 5 nC VDD = 10V, ID = 3A, VGS = 4.5V 2
Turn-on Delay Time td(on) 4 ns VDD = 10V, ID = 3A, RG = 3Ω 2
Turn-on Rise Time tr 28 ns VDD = 10V, ID = 3A, RG = 3Ω 2
Turn-off Delay Time td(off) 16 ns VDD = 10V, ID = 3A, RG = 3Ω 2
Turn-off Fall Time tf 26 ns VDD = 10V, ID = 3A, RG = 3Ω 2
Reverse Recovery Time Trr 18 ns IS = 3A, VGS = 0V, di/dt=-100A/us 2
Reverse Recovery Charge Qrr 10 nc IS = 3A, VGS = 0V, di/dt=-100A/us 2

CAD (KiCad official)

  • Symbol: G26N02K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: g26n02k-etched.step / g26n02k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g26n02k.step / g26n02k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 088356aa70280eaa, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF