component
G2302S
Public Made by Adomby adom
LGE MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownG2302S
LGE · MOSFETs · SOT-23
G2302S from LGE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; 3.3V logic-level drive, gate-source voltage limited to ±10 V with threshold of 0.4 V min to 1.0 V max at 250 µA. |
| 2 | S | passive | Source; continuous drain current up to 2.3 A at TA=25°C, body diode source current up to 1.5 A. |
| 3 | D | passive | Drain; drain-source breakdown voltage 20 V minimum, 2.3 A continuous and 9 A pulsed drain current at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LGE |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -50 | 150 | °C | 1 | ||
| Pulse Drain Current Tested | IDM | 9 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 2.3 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 1.8 | A | TA=70°C | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA=70°C | 1 | ||
| Thermal Resistance Junction-Ambient | RJA | 125 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current (TA=25℃) | IDSS | 1 | μA | VDS=20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TA=125℃) | IDSS | 100 | uA | VDS=16V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.4 | 0.6 | 1 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 48 | 60 | mΩ | VGS=4.5V, ID=2A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 55 | 70 | mΩ | VGS=3.3V, ID=1A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 66 | 80 | mΩ | VGS=2.5V, ID=1A | 2 | |
| Source Drain Current (Body Diode) | IS | 1.5 | A | TA=25℃ | 2 | ||
| Forward On Voltage | VSD | 0.82 | 1.2 | V | Tj=25℃, ISD=1A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
G2302S - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
g2302s-etched.step/g2302s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g2302s.step/g2302s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LGE datasheet (5 pp, sha256
9384ac3118612b64, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).