component
G2302
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LGE MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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G2302
LGE · MOSFETs · SOT-23
G2302 from LGE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of VGS ±8 V. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET; the datasheet gives a continuous source-drain diode conduction current limit of IS 0.6 A. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; the datasheet gives a drain-source voltage limit of VDS 20 V and a continuous drain current of ID 2.1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LGE |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -8 | 8 | V | Ta=25℃ | 1 | |
| Continuous Drain Current | ID | 2.1 | A | Ta=25℃ | 1 | ||
| Continuous Source-Drain Current (Diode Conduction) | IS | 0.6 | A | Ta=25℃ | 1 | ||
| Power Dissipation | PD | 0.35 | W | Ta=25℃ | 1 | ||
| Operating Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | ℃/W | t≤5s | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =10µA | 2 | ||
| Gate-threshold voltage | VGS(th) | 0.65 | 0.95 | 1.2 | V | VDS =VGS, ID =50µA | 2 |
| Gate-body leakage | IGSS | -100 | 100 | nA | VDS =0V, VGS =±8V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =20V, VGS =0V | 2 | ||
| Drain-source on-resistance (VGS=4.5V) | rDS(on) | 0.045 | 0.06 | Ω | VGS =4.5V, ID =3.6A | 2 | |
| Drain-source on-resistance (VGS=2.5V) | rDS(on) | 0.07 | 0.115 | Ω | VGS =2.5V, ID =3.1A | 2 | |
| Diode forward voltage | VSD | 0.76 | 1.2 | V | IS=0.94A, VGS=0V | 2 | |
| Total gate charge | Qg | 4 | 10 | nC | VDS =10V, VGS =4.5V, ID =3.6A | 2 | |
| Forward transconductance | gfs | 8 | S | VDS =5V, ID =3.6A | 2 | ||
| Gate-source charge | Qgs | 0.65 | nC | VDS =10V, VGS =4.5V, ID =3.6A | 2 | ||
| Gate-drain charge | Qgd | 1.5 | nC | VDS =10V, VGS =4.5V, ID =3.6A | 2 | ||
| Input capacitance | Ciss | 300 | pF | VDS =10V, VGS =0V, f=1MHz | 2 | ||
| Output capacitance | Coss | 120 | pF | VDS =10V, VGS =0V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 80 | pF | VDS =10V, VGS =0V, f=1MHz | 2 | ||
| Turn-on delay time | td(on) | 7 | 15 | ns | VDD=10V, RL=5.5Ω, ID≈3.6A, VGEN=4.5V, Rg=6Ω | 2 | |
| Rise time | tr | 55 | 80 | ns | VDD=10V, RL=5.5Ω, ID≈3.6A, VGEN=4.5V, Rg=6Ω | 2 | |
| Turn-off delay time | td(off) | 16 | 60 | ns | VDD=10V, RL=5.5Ω, ID≈3.6A, VGEN=4.5V, Rg=6Ω | 2 | |
| Fall time | tf | 10 | 25 | ns | VDD=10V, RL=5.5Ω, ID≈3.6A, VGEN=4.5V, Rg=6Ω | 2 |
CAD (KiCad official)
- Symbol:
G2302 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
g2302-etched.step/g2302-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g2302.step/g2302.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LGE datasheet (3 pp, sha256
1733cbfb0aa2d02c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# G2302
**LGE** · MOSFETs · SOT-23
G2302 from LGE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of VGS ±8 V. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET; the datasheet gives a continuous source-drain diode conduction current limit of IS 0.6 A. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; the datasheet gives a drain-source voltage limit of VDS 20 V and a continuous drain current of ID 2.1 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LGE |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 20 | V | Ta=25℃ | 1 |
| Gate-Source Voltage | VGS | -8 | | 8 | V | Ta=25℃ | 1 |
| Continuous Drain Current | ID | | | 2.1 | A | Ta=25℃ | 1 |
| Continuous Source-Drain Current (Diode Conduction) | IS | | | 0.6 | A | Ta=25℃ | 1 |
| Power Dissipation | PD | | | 0.35 | W | Ta=25℃ | 1 |
| Operating Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 357 | ℃/W | t≤5s | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 20 | | | V | VGS = 0V, ID =10µA | 2 |
| Gate-threshold voltage | VGS(th) | 0.65 | 0.95 | 1.2 | V | VDS =VGS, ID =50µA | 2 |
| Gate-body leakage | IGSS | -100 | | 100 | nA | VDS =0V, VGS =±8V | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =20V, VGS =0V | 2 |
| Drain-source on-resistance (VGS=4.5V) | rDS(on) | | 0.045 | 0.06 | Ω | VGS =4.5V, ID =3.6A | 2 |
| Drain-source on-resistance (VGS=2.5V) | rDS(on) | | 0.07 | 0.115 | Ω | VGS =2.5V, ID =3.1A | 2 |
| Diode forward voltage | VSD | | 0.76 | 1.2 | V | IS=0.94A, VGS=0V | 2 |
| Total gate charge | Qg | | 4 | 10 | nC | VDS =10V, VGS =4.5V, ID =3.6A | 2 |
| Forward transconductance | gfs | | 8 | | S | VDS =5V, ID =3.6A | 2 |
| Gate-source charge | Qgs | | 0.65 | | nC | VDS =10V, VGS =4.5V, ID =3.6A | 2 |
| Gate-drain charge | Qgd | | 1.5 | | nC | VDS =10V, VGS =4.5V, ID =3.6A | 2 |
| Input capacitance | Ciss | | 300 | | pF | VDS =10V, VGS =0V, f=1MHz | 2 |
| Output capacitance | Coss | | 120 | | pF | VDS =10V, VGS =0V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss | | 80 | | pF | VDS =10V, VGS =0V, f=1MHz | 2 |
| Turn-on delay time | td(on) | | 7 | 15 | ns | VDD=10V, RL=5.5Ω, ID≈3.6A, VGEN=4.5V, Rg=6Ω | 2 |
| Rise time | tr | | 55 | 80 | ns | VDD=10V, RL=5.5Ω, ID≈3.6A, VGEN=4.5V, Rg=6Ω | 2 |
| Turn-off delay time | td(off) | | 16 | 60 | ns | VDD=10V, RL=5.5Ω, ID≈3.6A, VGEN=4.5V, Rg=6Ω | 2 |
| Fall time | tf | | 10 | 25 | ns | VDD=10V, RL=5.5Ω, ID≈3.6A, VGEN=4.5V, Rg=6Ω | 2 |
## CAD (KiCad official)
- Symbol: `G2302`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `g2302-etched.step` / `g2302-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g2302.step` / `g2302.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [LGE datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916127062114304) (3 pp, sha256 `1733cbfb0aa2d02c`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/g2302-datasheet.pdf)