component
G1K3N10LL
Public Made by Adomby adom
GOFORD MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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G1K3N10LL
GOFORD · MOSFETs · SOT-23-6L
G1K3N10LL from GOFORD, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, connected internally to the other drain pins; VDS rated 100V and continuous ID 3.4A. |
| 2 | D | passive | Drain, connected internally to the other drain pins; VDS rated 100V and continuous ID 3.4A. |
| 3 | G | input | Gate, with VGS rated ±20V and threshold voltage VGS(th) of 1.0V min to 2.5V max at 250µA. |
| 4 | S | passive | Source of the N-channel MOSFET, with the body diode running source to drain (continuous IS 3.4A). |
| 5 | D | passive | Drain, connected internally to the other drain pins; VDS rated 100V and continuous ID 3.4A. |
| 6 | D | passive | Drain, connected internally to the other drain pins; VDS rated 100V and continuous ID 3.4A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 100V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 100 | 130 | mΩ | VGS = 10V, ID = 1A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 107 | 145 | mΩ | VGS = 4.5V, ID = 1A | 2 | |
| Continuous Body Diode Current | IS | 3.4 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 1A, VGS = 0V | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | 3.4 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | 13.6 | A | TC = 25ºC, note1 | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| Power Dissipation | PD | 2.28 | W | TC = 25ºC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | TC = 25ºC | 1 | |
| Thermal Resistance, Junction-to-Ambient | RthJA | 54.8 | ºC/W | 1 | |||
| Forward Transconductance | gFS | 8 | S | VGS = 5V, ID = 1A | 2 | ||
| Input Capacitance | Ciss | 808 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 29 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 24 | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 22 | nC | VDD = 50V, ID = 1A, VGS = 10V | 2 | ||
| Gate-Source Charge | Qgs | 2.8 | nC | VDD = 50V, ID = 1A, VGS = 10V | 2 | ||
| Gate-Drain Charge | Qgd | 5 | nC | VDD = 50V, ID = 1A, VGS = 10V | 2 | ||
| Turn-on Delay Time | td(on) | 7 | ns | VDD = 50V, ID = 1A, RG = 3Ω | 2 | ||
| Turn-on Rise Time | tr | 2.7 | ns | VDD = 50V, ID = 1A, RG = 3Ω | 2 | ||
| Turn-off Delay Time | td(off) | 22 | ns | VDD = 50V, ID = 1A, RG = 3Ω | 2 | ||
| Turn-off Fall Time | tf | 4.6 | ns | VDD = 50V, ID = 1A, RG = 3Ω | 2 | ||
| Reverse Recovery Charge | Qrr | 22 | nC | IF = 1A, VGS = 0V, di/dt=100A/us | 2 | ||
| Reverse Recovery Time | Trr | 30 | ns | IF = 1A, VGS = 0V, di/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
G1K3N10LL - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
g1k3n10ll-etched.step/g1k3n10ll-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g1k3n10ll.step/g1k3n10ll.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
73ad7e68f29474e8, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# G1K3N10LL
**GOFORD** · MOSFETs · SOT-23-6L
G1K3N10LL from GOFORD, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, connected internally to the other drain pins; VDS rated 100V and continuous ID 3.4A. |
| 2 | D | passive | Drain, connected internally to the other drain pins; VDS rated 100V and continuous ID 3.4A. |
| 3 | G | input | Gate, with VGS rated ±20V and threshold voltage VGS(th) of 1.0V min to 2.5V max at 250µA. |
| 4 | S | passive | Source of the N-channel MOSFET, with the body diode running source to drain (continuous IS 3.4A). |
| 5 | D | passive | Drain, connected internally to the other drain pins; VDS rated 100V and continuous ID 3.4A. |
| 6 | D | passive | Drain, connected internally to the other drain pins; VDS rated 100V and continuous ID 3.4A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 100V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 100 | 130 | mΩ | VGS = 10V, ID = 1A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 107 | 145 | mΩ | VGS = 4.5V, ID = 1A | 2 |
| Continuous Body Diode Current | IS | | | 3.4 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD | | | 1.2 | V | TJ = 25ºC, ISD = 1A, VGS = 0V | 2 |
| Drain-Source Voltage | VDS | | | 100 | V | TC = 25ºC | 1 |
| Continuous Drain Current | ID | | | 3.4 | A | TC = 25ºC | 1 |
| Pulsed Drain Current | IDM | | | 13.6 | A | TC = 25ºC, note1 | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC = 25ºC | 1 |
| Power Dissipation | PD | | | 2.28 | W | TC = 25ºC | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | TC = 25ºC | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | 54.8 | | ºC/W | | 1 |
| Forward Transconductance | gFS | | 8 | | S | VGS = 5V, ID = 1A | 2 |
| Input Capacitance | Ciss | | 808 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 29 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 24 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg | | 22 | | nC | VDD = 50V, ID = 1A, VGS = 10V | 2 |
| Gate-Source Charge | Qgs | | 2.8 | | nC | VDD = 50V, ID = 1A, VGS = 10V | 2 |
| Gate-Drain Charge | Qgd | | 5 | | nC | VDD = 50V, ID = 1A, VGS = 10V | 2 |
| Turn-on Delay Time | td(on) | | 7 | | ns | VDD = 50V, ID = 1A, RG = 3Ω | 2 |
| Turn-on Rise Time | tr | | 2.7 | | ns | VDD = 50V, ID = 1A, RG = 3Ω | 2 |
| Turn-off Delay Time | td(off) | | 22 | | ns | VDD = 50V, ID = 1A, RG = 3Ω | 2 |
| Turn-off Fall Time | tf | | 4.6 | | ns | VDD = 50V, ID = 1A, RG = 3Ω | 2 |
| Reverse Recovery Charge | Qrr | | 22 | | nC | IF = 1A, VGS = 0V, di/dt=100A/us | 2 |
| Reverse Recovery Time | Trr | | 30 | | ns | IF = 1A, VGS = 0V, di/dt=100A/us | 2 |
## CAD (KiCad official)
- Symbol: `G1K3N10LL`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `g1k3n10ll-etched.step` / `g1k3n10ll-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g1k3n10ll.step` / `g1k3n10ll.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOFORD datasheet](docs/g1k3n10ll-datasheet.pdf) (6 pp, sha256 `73ad7e68f29474e8`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/g1k3n10ll-datasheet.pdf)