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G1K3N10G

Public Made by Adom

by adom

GOFORD MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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G1K3N10G

GOFORD · MOSFETs · SOT-89

G1K3N10G from GOFORD, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) of 1 V min to 2 V max at ID = 250µA.
2 D passive Drain, also the exposed tab; VDS rated 100 V and continuous ID 5 A (20 A pulsed).
3 S passive Source; the body diode runs from source to drain, with continuous current IS of 5 A and VSD of 1.2 V max.

Key specifications

Parameter Value
Manufacturer GOFORD
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 1 1.6 2 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 110 130 mΩ VGS = 10V, ID = 5A 2
Drain-Source On-Resistance RDS(on) 120 150 mΩ VGS = 4.5V, ID = 5A 2
Continuous Body Diode Current IS 5 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 5A, VGS = 0V 2
Drain-Source Voltage VDS 100 V TC = 25ºC 1
Continuous Drain Current ID 5 A TC = 25ºC 1
Pulsed Drain Current IDM 20 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 1.5 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 83 ºC/W 1
Forward Transconductance gFS 7 S VGS = 5V, ID = 5A 2
Input Capacitance Ciss 644 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Output Capacitance Coss 25 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 14 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Total Gate Charge Qg 20 nC VDD = 50V, ID = 5A, VGS = 10V 2
Gate-Source Charge Qgs 2.1 nC VDD = 50V, ID = 5A, VGS = 10V 2
Gate-Drain Charge Qgd 3.3 nC VDD = 50V, ID = 5A, VGS = 10V 2
Turn-on Delay Time td(on) 6 ns VDD = 50V, ID = 5A, RG = 3Ω 2
Turn-on Rise Time tr 4 ns VDD = 50V, ID = 5A, RG = 3Ω 2
Turn-off Delay Time td(off) 20 ns VDD = 50V, ID = 5A, RG = 3Ω 2
Turn-off Fall Time tf 4 ns VDD = 50V, ID = 5A, RG = 3Ω 2
Reverse Recovery Charge Qrr 11 nC IF = 5A, VGS = 0V, di/dt=100A/us 2
Reverse Recovery Time Trr 22 ns IF = 5A, VGS = 0V, di/dt=100A/us 2

CAD (KiCad official)

  • Symbol: G1K3N10G
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: g1k3n10g-etched.step / g1k3n10g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g1k3n10g.step / g1k3n10g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 6c5d438e285910fc, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF