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G18P03S

Public Made by Adom

by adom

GOFORD MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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G18P03S

GOFORD · MOSFETs · SOP-8

G18P03S from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source pin of the P-channel MOSFET, tied to pins 2 and 3; drain-source voltage rating is -30V.
2 S passive Source pin of the P-channel MOSFET, tied to pins 1 and 3; continuous drain current is -15A at Tc=25℃.
3 S passive Source pin of the P-channel MOSFET, tied to pins 1 and 2; body diode source-drain current is -15A.
4 G input Gate pin; gate-source voltage is rated ±20V and threshold voltage is -1.1V min to -2.5V max at ID=-250μA.
5 D passive Drain pin, tied to pins 6, 7 and 8; pulsed drain current is -60A.
6 D passive Drain pin, tied to pins 5, 7 and 8; RDS(ON) is 8.1mΩ typ at VGS=-10V and 10.5mΩ typ at VGS=-4.5V.
7 D passive Drain pin, tied to pins 5, 6 and 8; drain-source breakdown voltage is -30V min at ID=-250μA.
8 D passive Drain pin, tied to pins 5, 6 and 7; power dissipation is 3.1W at Tc=25℃.

Key specifications

Parameter Value
Manufacturer GOFORD
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V VGS=0V 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID -15 A Tc=25℃ 1
Drain Current-Pulsed IDM (pluse) -60 A Note 1 (repetitive, pulse width limited by max junction temperature) 1
Maximum Power Dissipation PD 3.1 W Tc=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RJC 40 ℃/W Junction-to-Case 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) -1.1 -1.6 -2.5 V VDS=VGS,ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 8.1 10 mΩ VGS=-10V, ID=-10A 2
Drain-Source On-State Resistance RDS(ON) 10.5 15 mΩ VGS=-4.5V, ID=-6 A 2
Source-Drain Current (Body Diode) IS -15 A 2
Forward on Voltage VSD -1.2 V VGS=0V,IS=-10A 2
Forward Transconductance gFS 28 S VDS=-5V,ID=-10A 2
Input Capacitance Ciss 3570 pF VDS=-15V,VGS=0V, f=1.0MHz 2
Output Capacitance Coss 435 pF VDS=-15V,VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 175 pF VDS=-15V,VGS=0V, f=1.0MHz 2
Turn-on Delay Time td(on) 16 nS VDD=-15V,ID=-1A,RL=15Ω VGS=-10V,RG=2.5Ω 2
Turn-on Rise Time tr 14 nS VDD=-15V,ID=-1A,RL=15Ω VGS=-10V,RG=2.5Ω 2
Turn-Off Delay Time td(off) 50 nS VDD=-15V,ID=-1A,RL=15Ω VGS=-10V,RG=2.5Ω 2
Turn-Off Fall Time tf 22 nS VDD=-15V,ID=-1A,RL=15Ω VGS=-10V,RG=2.5Ω 2
Total Gate Charge Qg 58 nC VGS=-10V, VDS=-15V, ID=-10A 2
Gate-Source Charge Qgs 9 nC VGS=-10V, VDS=-15V, ID=-10A 2
Gate-Drain Charge Qgd 14 nC VGS=-10V, VDS=-15V, ID=-10A 2

CAD (KiCad official)

  • Symbol: G18P03S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: g18p03s-etched.step / g18p03s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g18p03s.step / g18p03s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 e113068983a2bdb8, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF