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G16N03A

GOFORD · MOSFETs · DFN5x6-8L

G16N03A from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied with pins 2 and 3; VDS max 30 V, continuous ID 16 A.
2 S passive Source of the N-channel MOSFET, tied with pins 1 and 3; VDS max 30 V, continuous ID 16 A.
3 S passive Source of the N-channel MOSFET, tied with pins 1 and 2; VDS max 30 V, continuous ID 16 A.
4 G input Gate of the N-channel MOSFET; VGS max ±20 V, threshold 1 V min to 3 V max at ID=250 µA.
5 D passive Drain of the MOSFET, tied with pins 6, 7 and 8; VDS max 30 V, pulsed IDM 50 A.
6 D passive Drain of the MOSFET, tied with pins 5, 7 and 8; VDS max 30 V, pulsed IDM 50 A.
7 D passive Drain of the MOSFET, tied with pins 5, 6 and 8; VDS max 30 V, pulsed IDM 50 A.
8 D passive Drain of the MOSFET, tied with pins 5, 6 and 7; VDS max 30 V, pulsed IDM 50 A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer GOFORD
Package DFN5x6-8L
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 33 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.6 3 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 8 12 mΩ VGS=10V, ID=10A 2
Drain-Source On-State Resistance RDS(ON) 11 16 mΩ VGS=4.5V, ID=5A 2
Forward Transconductance gFS 15 S VDS=5V,ID=10A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=10A 2
Diode Forward Current IS 16 A 2
Drain-Source Voltage VDS 30 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V TA=25℃ 1
Drain Current-Continuous ID 16 A TA=25℃ 1
Drain Current-Continuous (100℃) ID (100℃) 6 A TC=100℃ 1
Pulsed Drain Current IDM 50 A TA=25℃ 1
Maximum Power Dissipation PD 2.5 W TA=25℃ 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 50 ℃/W Note 2 1
Input Capacitance Clss 1550 PF VDS=15V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 300 PF VDS=15V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 180 PF VDS=15V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 30 nS VDD=25V,ID=1A VGS=10V,RGEN=6Ω 2
Turn-on Rise Time tr 20 nS VDD=25V,ID=1A VGS=10V,RGEN=6Ω 2
Turn-Off Delay Time td(off) 100 nS VDD=25V,ID=1A VGS=10V,RGEN=6Ω 2
Turn-Off Fall Time tf 80 nS VDD=25V,ID=1A VGS=10V,RGEN=6Ω 2
Total Gate Charge Qg 13 nC VDS=15V,ID=10A, VGS=5V 2
Gate-Source Charge Qgs 5.5 nC VDS=15V,ID=10A, VGS=5V 2
Gate-Drain Charge Qgd 3.5 nC VDS=15V,ID=10A, VGS=5V 2

CAD (KiCad official)

  • Symbol: G16N03A
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: g16n03a-etched.step / g16n03a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g16n03a.step / g16n03a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 23213839fd3f7586, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF