component
G130N06S
Public Made by Adomby adom
GOFORD MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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G130N06S
GOFORD · MOSFETs · SOP-8
G130N06S from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source. |
| 2 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source. |
| 3 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS rated ±20V maximum. |
| 5 | D | passive | Drain of the MOSFET; pins 5-8 are drain, VDS 60V maximum. |
| 6 | D | passive | Drain of the MOSFET; pins 5-8 are drain, VDS 60V maximum. |
| 7 | D | passive | Drain of the MOSFET; pins 5-8 are drain, VDS 60V maximum. |
| 8 | D | passive | Drain of the MOSFET; pins 5-8 are drain, VDS 60V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | 9 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | 36 | A | TC = 25ºC | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25ºC | 1 | |
| Power Dissipation | PD | 2.6 | W | TC = 25ºC | 1 | ||
| Single pulse avalanche energy | EAS | 100 | mJ | Tj=25℃, VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | TC = 25ºC | 1 | |
| Thermal Resistance, Junction-to-Ambient | RthJA | 48 | ºC/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 60V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 10 | 12 | mΩ | VGS = 10V, ID = 10A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 11.5 | 14 | mΩ | VGS = 4.5V, ID = 10A | 2 | |
| Continuous Body Diode Current | IS | 9 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 10A, VGS = 0V | 2 | ||
| Forward Transconductance | gFS | 17 | S | VGS = 5V, ID = 10A | 2 | ||
| Input Capacitance | Ciss | 3068 | pF | VGS = 0V, VDS = 30V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 251 | pF | VGS = 0V, VDS = 30V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 197 | pF | VGS = 0V, VDS = 30V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 67 | nC | VDD = 30V, ID = 10A, VGS = 10V | 2 | ||
| Gate-Source Charge | Qgs | 11 | nC | VDD = 30V, ID = 10A, VGS = 10V | 2 | ||
| Gate-Drain Charge | Qgd | 15 | nC | VDD = 30V, ID = 10A, VGS = 10V | 2 | ||
| Turn-on Delay Time | td(on) | 10 | ns | VDD = 30V, ID = 10A, RG = 3Ω | 2 | ||
| Turn-on Rise Time | tr | 8 | ns | VDD = 30V, ID = 10A, RG = 3Ω | 2 | ||
| Turn-off Delay Time | td(off) | 36 | ns | VDD = 30V, ID = 10A, RG = 3Ω | 2 | ||
| Turn-off Fall Time | tf | 6 | ns | VDD = 30V, ID = 10A, RG = 3Ω | 2 | ||
| Reverse Recovery Charge | Qrr | 49 | nC | IF = 10A, VGS = 0V, di/dt=100A/us | 2 | ||
| Reverse Recovery Time | Trr | 34 | ns | IF = 10A, VGS = 0V, di/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
G130N06S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
g130n06s-etched.step/g130n06s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g130n06s.step/g130n06s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
a911bafe991a7cca, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# G130N06S
**GOFORD** · MOSFETs · SOP-8
G130N06S from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source. |
| 2 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source. |
| 3 | S | passive | Source of the N-channel MOSFET; pins 1-3 are source. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS rated ±20V maximum. |
| 5 | D | passive | Drain of the MOSFET; pins 5-8 are drain, VDS 60V maximum. |
| 6 | D | passive | Drain of the MOSFET; pins 5-8 are drain, VDS 60V maximum. |
| 7 | D | passive | Drain of the MOSFET; pins 5-8 are drain, VDS 60V maximum. |
| 8 | D | passive | Drain of the MOSFET; pins 5-8 are drain, VDS 60V maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 60 | V | TC = 25ºC | 1 |
| Continuous Drain Current | ID | | | 9 | A | TC = 25ºC | 1 |
| Pulsed Drain Current | IDM | | | 36 | A | TC = 25ºC | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TC = 25ºC | 1 |
| Power Dissipation | PD | | | 2.6 | W | TC = 25ºC | 1 |
| Single pulse avalanche energy | EAS | | | 100 | mJ | Tj=25℃, VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | TC = 25ºC | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | | 48 | ºC/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 60V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.7 | 2.5 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 10 | 12 | mΩ | VGS = 10V, ID = 10A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 11.5 | 14 | mΩ | VGS = 4.5V, ID = 10A | 2 |
| Continuous Body Diode Current | IS | | | 9 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD | | | 1.2 | V | TJ = 25ºC, ISD = 10A, VGS = 0V | 2 |
| Forward Transconductance | gFS | | 17 | | S | VGS = 5V, ID = 10A | 2 |
| Input Capacitance | Ciss | | 3068 | | pF | VGS = 0V, VDS = 30V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 251 | | pF | VGS = 0V, VDS = 30V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 197 | | pF | VGS = 0V, VDS = 30V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg | | 67 | | nC | VDD = 30V, ID = 10A, VGS = 10V | 2 |
| Gate-Source Charge | Qgs | | 11 | | nC | VDD = 30V, ID = 10A, VGS = 10V | 2 |
| Gate-Drain Charge | Qgd | | 15 | | nC | VDD = 30V, ID = 10A, VGS = 10V | 2 |
| Turn-on Delay Time | td(on) | | 10 | | ns | VDD = 30V, ID = 10A, RG = 3Ω | 2 |
| Turn-on Rise Time | tr | | 8 | | ns | VDD = 30V, ID = 10A, RG = 3Ω | 2 |
| Turn-off Delay Time | td(off) | | 36 | | ns | VDD = 30V, ID = 10A, RG = 3Ω | 2 |
| Turn-off Fall Time | tf | | 6 | | ns | VDD = 30V, ID = 10A, RG = 3Ω | 2 |
| Reverse Recovery Charge | Qrr | | 49 | | nC | IF = 10A, VGS = 0V, di/dt=100A/us | 2 |
| Reverse Recovery Time | Trr | | 34 | | ns | IF = 10A, VGS = 0V, di/dt=100A/us | 2 |
## CAD (KiCad official)
- Symbol: `G130N06S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `g130n06s-etched.step` / `g130n06s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g130n06s.step` / `g130n06s.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOFORD datasheet](docs/g130n06s-datasheet.pdf) (6 pp, sha256 `a911bafe991a7cca`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/g130n06s-datasheet.pdf)