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G12P10KE

Public Made by Adom

by adom

GOFORD MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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G12P10KE

GOFORD · MOSFETs · TO-252

G12P10KE from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V absolute maximum, threshold -1.0 V min to -3.0 V max at ID = -250 µA, ESD (HBM) >7.0 kV.
2 D passive Drain (middle lead, shorted to the metal tab); drain-source voltage -100 V max, continuous drain current -12 A, pulsed -48 A.
3 S passive Source; body diode continuous current -12 A and forward voltage -1.2 V max at ISD = -6 A.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -100 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -100V, VGS = 0V 2
Gate-Source Leakage IGSS -10 10 uA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) -1 -1.7 -3 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 178 200 mΩ VGS = -10V, ID = -6A 2
Drain-Source On-Resistance RDS(on) 192 250 mΩ VGS = -4.5V, ID = -6A 2
Continuous Body Diode Current IS -12 A TC = 25ºC 2
Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -6A, VGS = 0V 2
Drain-Source Voltage VDS -100 V TC = 25ºC 1
Continuous Drain Current ID -12 A TC = 25ºC 1
Pulsed Drain Current IDM -48 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 44.6 W TC = 25ºC 1
Single pulse avalanche energy EAS 25 mJ Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 55 ºC/W 1
Maximum Junction-to-Case RthJC 2.8 ºC/W 1
Forward Transconductance gFS 12 S VDS = -15V, ID = -6A 2
Input Capacitance Ciss 1652 pF VGS = 0V, VDS = -50V, f = 1.0MHz 2
Output Capacitance Coss 42 pF VGS = 0V, VDS = -50V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 41 pF VGS = 0V, VDS = -50V, f = 1.0MHz 2
Total Gate Charge Qg 33 nC VDD = -50V, ID = -6A, VGS = -10V 2
Gate-Source Charge Qgs 4 nC VDD = -50V, ID = -6A, VGS = -10V 2
Gate-Drain Charge Qgd 7 nC VDD = -50V, ID = -6A, VGS = -10V 2
Turn-on Delay Time td(on) 52 ns VDD = -50V, ID = -6A, RG = 9Ω 2
Turn-on Rise Time tr 12 ns VDD = -50V, ID = -6A, RG = 9Ω 2
Turn-off Delay Time td(off) 38 ns VDD = -50V, ID = -6A, RG = 9Ω 2
Turn-off Fall Time tf 28 ns VDD = -50V, ID = -6A, RG = 9Ω 2
Reverse Recovery Charge Qrr 35 nC IF = -6A, VGS = 0V, di/dt=-500A/us 2
Reverse Recovery Time Trr 46 ns IF = -6A, VGS = 0V, di/dt=-500A/us 2

CAD (KiCad official)

  • Symbol: G12P10KE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: g12p10ke-etched.step / g12p10ke-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g12p10ke.step / g12p10ke.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 4f9dc027a21c35e3, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF