# G12P10KE-B

**GOFORD** · MOSFETs · TO-252

G12P10KE-B from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -1.0 to -3.0 V at ID = -250µA. |
| 2 | D | passive | Drain, also the exposed tab; drain-source voltage rated -100 V with continuous drain current of -12 A. |
| 3 | S | passive | Source; continuous body diode current is -12 A and RDS(on) is below 350 mΩ at VGS = -10 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -100 |  |  | V | VGS = 0V, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS = -100V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -10 |  | 10 | uA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.7 | -3 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 280 | 350 | mΩ | VGS = -10V, ID = -6A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 300 | 370 | mΩ | VGS = -4.5V, ID = -6A | 2 |
| Continuous Body Diode Current | IS |  |  | -12 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD |  |  | -1.2 | V | TJ = 25ºC, ISD = -6A, VGS = 0V | 2 |
| Drain-Source Voltage | VDS |  |  | -100 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -12 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | -48 | A |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Power Dissipation | PD |  |  | 44.6 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 25 | mJ |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA |  |  | 55 | ºC/W |  | 1 |
| Maximum Junction-to-Case | RthJC |  |  | 2.8 | ºC/W |  | 1 |

## CAD (KiCad official)

- Symbol: `G12P10KE-B`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `g12p10ke-b-etched.step` / `g12p10ke-b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g12p10ke-b.step` / `g12p10ke-b.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GOFORD datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590923051339104256) (6 pp, sha256 `f367a43bf5ef981b`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/g12p10ke-b-datasheet.pdf)