component

G115P06T

Public Made by Adom

by adom

GOFORD MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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G115P06T

GOFORD · MOSFETs · TO-220

G115P06T from GOFORD, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of -2.0 to -4.0 V (VDS = VGS, ID = -250µA), drive at VGS = -10V for RDS(on) < 11.5mΩ.
2 D passive Drain; drain-source voltage rated -60 V with continuous drain current of -98 A and pulsed drain current of -392 A.
3 S passive Source; body diode continuous current of -98 A with forward voltage up to -1.2 V at ISD = -15A.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V TC = 25ºC 1
Continuous Drain Current ID -98 A TC = 25ºC 1
Pulsed Drain Current IDM -392 A TC = 25ºC; note 1 (pulse width limited by maximum junction temperature) 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 211.9 W TC = 25ºC 1
Single pulse avalanche energy EAS 81 mJ note 2: Tj=25℃, VDD=-50V, VGS=-10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W 1
Maximum Junction-to-Case RthJC 0.59 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS -60 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -60V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) -2 -2.7 -4 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 9.3 11.5 mΩ VGS = -10V, ID = -15A 2
Continuous Body Diode Current IS -98 A TC = 25ºC 2
Body Diode Voltage VSD -1.2 V TJ = 25ºC, ISD = -15A, VGS = 0V 2

CAD (KiCad official)

  • Symbol: G115P06T
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: g115p06t-etched.step / g115p06t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g115p06t.step / g115p06t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 11bfcece390f58ec, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF