component

G100C04D52

Public Made by Adom

by adom

GOFORD MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsg100c04d52factory-2.0.0extractor-text

Verified G100C04D52

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: G100C04D52 · DFN5x6-8L · 9 pins
  • ✓copper: 16 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 10-page datasheet
  • •distributor (warn): no ['mouser'] number
  • ✓family: DFN-S-8-1EP_6x5mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-96ywbysu/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ g100c04d52.kicad_sym✓ g100c04d52.kicad_mod✓ g100c04d52.step
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Ray Publish 0.1.0 19ee9bc 5d ago

G100C04D52

GOFORD · MOSFETs · DFN5x6-8L

G100C04D52 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (NMOS), VDS 40V, ID 40A at VGS = 10V.
2 G1 input Gate of the N-channel MOSFET (NMOS), VGS rated ±20V.
3 S2 passive Source of the P-channel MOSFET (PMOS), VDS -40V, ID -24A at VGS = -10V.
4 G2 input Gate of the P-channel MOSFET (PMOS), VGS rated ±20V.
5 D2 passive Drain of the P-channel MOSFET (PMOS), VDS -40V, pulsed drain current -96A.
6 D2 passive Drain of the P-channel MOSFET (PMOS), VDS -40V, pulsed drain current -96A.
7 D1 passive Drain of the N-channel MOSFET (NMOS), VDS 40V, pulsed drain current 200A.
8 D1 passive Drain of the N-channel MOSFET (NMOS), VDS 40V, pulsed drain current 200A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer GOFORD
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

CAD (KiCad official)

  • Symbol: G100C04D52
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: g100c04d52-etched.step / g100c04d52-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g100c04d52.step / g100c04d52.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (10 pp, sha256 8c01d606fda4ab49, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF