component
G09P02L
Public Made by Adomby adom
GOFORD MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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G09P02L
GOFORD · MOSFETs · SOT-23-3
G09P02L from GOFORD, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of -0.5 V min to -1.2 V max at ID = -250µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous body diode current up to -9 A and drain-source voltage rating of -20 V. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS -20 V, continuous drain current -9 A and pulsed drain current -36 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS = 0V, ID = -250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS = -20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±12V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -0.5 | -0.8 | -1.2 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 18 | 23 | mΩ | VGS = -4.5V, ID = -1A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 25 | 30 | mΩ | VGS = -2.5V, ID = -1A | 2 | |
| Continuous Body Diode Current | IS | -9 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | -1.2 | V | TJ = 25ºC, ISD = -1A, VGS = 0V | 2 | ||
| Drain-Source Voltage | VDS | -20 | V | TC = 25ºC | 1 | ||
| Continuous Drain Current | ID | -9 | A | TC = 25ºC | 1 | ||
| Pulsed Drain Current | IDM | -36 | A | TC = 25ºC | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TC = 25ºC | 1 | |
| Power Dissipation | PD | 2.2 | W | TC = 25ºC | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 58 | ºC/W | 1 | |||
| Input Capacitance | Ciss | 620 | pF | VGS = 0V, VDS = -10V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 125 | pF | VGS = 0V, VDS = -10V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 64 | pF | VGS = 0V, VDS = -10V, f = 1.0MHz | 2 | ||
| Total Gate Charge | Qg | 15 | nC | VDS = -10V, ID = -5A, VGS = -4.5V | 2 | ||
| Gate-Source Charge | Qgs | 2 | nC | VDS = -10V, ID = -5A, VGS = -4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 3 | nC | VDS = -10V, ID = -5A, VGS = -4.5V | 2 | ||
| Turn-on Delay Time | td(on) | 4.5 | ns | VDD = -10V, ID = -5A, RG = 6Ω | 2 | ||
| Turn-on Rise Time | tr | 9 | ns | VDD = -10V, ID = -5A, RG = 6Ω | 2 | ||
| Turn-off Delay Time | td(off) | 19 | ns | VDD = -10V, ID = -5A, RG = 6Ω | 2 | ||
| Turn-off Fall Time | tf | 3 | ns | VDD = -10V, ID = -5A, RG = 6Ω | 2 |
CAD (KiCad official)
- Symbol:
G09P02L - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
g09p02l-etched.step/g09p02l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g09p02l.step/g09p02l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
c0036ca21f7ff6c5, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# G09P02L
**GOFORD** · MOSFETs · SOT-23-3
G09P02L from GOFORD, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, with threshold VGS(th) of -0.5 V min to -1.2 V max at ID = -250µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous body diode current up to -9 A and drain-source voltage rating of -20 V. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS -20 V, continuous drain current -9 A and pulsed drain current -36 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | | | V | VGS = 0V, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | uA | VDS = -20V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±12V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -0.5 | -0.8 | -1.2 | V | VDS = VGS, ID = -250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 18 | 23 | mΩ | VGS = -4.5V, ID = -1A | 2 |
| Drain-Source On-Resistance | RDS(on) | | 25 | 30 | mΩ | VGS = -2.5V, ID = -1A | 2 |
| Continuous Body Diode Current | IS | | | -9 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD | | | -1.2 | V | TJ = 25ºC, ISD = -1A, VGS = 0V | 2 |
| Drain-Source Voltage | VDS | | | -20 | V | TC = 25ºC | 1 |
| Continuous Drain Current | ID | | | -9 | A | TC = 25ºC | 1 |
| Pulsed Drain Current | IDM | | | -36 | A | TC = 25ºC | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | TC = 25ºC | 1 |
| Power Dissipation | PD | | | 2.2 | W | TC = 25ºC | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | ºC | | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | | 58 | ºC/W | | 1 |
| Input Capacitance | Ciss | | 620 | | pF | VGS = 0V, VDS = -10V, f = 1.0MHz | 2 |
| Output Capacitance | Coss | | 125 | | pF | VGS = 0V, VDS = -10V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 64 | | pF | VGS = 0V, VDS = -10V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg | | 15 | | nC | VDS = -10V, ID = -5A, VGS = -4.5V | 2 |
| Gate-Source Charge | Qgs | | 2 | | nC | VDS = -10V, ID = -5A, VGS = -4.5V | 2 |
| Gate-Drain Charge | Qgd | | 3 | | nC | VDS = -10V, ID = -5A, VGS = -4.5V | 2 |
| Turn-on Delay Time | td(on) | | 4.5 | | ns | VDD = -10V, ID = -5A, RG = 6Ω | 2 |
| Turn-on Rise Time | tr | | 9 | | ns | VDD = -10V, ID = -5A, RG = 6Ω | 2 |
| Turn-off Delay Time | td(off) | | 19 | | ns | VDD = -10V, ID = -5A, RG = 6Ω | 2 |
| Turn-off Fall Time | tf | | 3 | | ns | VDD = -10V, ID = -5A, RG = 6Ω | 2 |
## CAD (KiCad official)
- Symbol: `G09P02L`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `g09p02l-etched.step` / `g09p02l-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g09p02l.step` / `g09p02l.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOFORD datasheet](docs/g09p02l-datasheet.pdf) (6 pp, sha256 `c0036ca21f7ff6c5`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/g09p02l-datasheet.pdf)