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G08N06S-BQ

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GOFORD MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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G08N06S-BQ

GOFORD · MOSFETs · SOP-8

G08N06S-BQ from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied to pins 2 and 3; body diode runs source to drain, continuous body diode current IS max 5A.
2 S passive Source of the N-channel MOSFET, tied to pins 1 and 3; continuous drain current is rated 5A.
3 S passive Source of the N-channel MOSFET, tied to pins 1 and 2; gate-source voltage limit is ±20V relative to this pin.
4 G input Gate of the N-channel MOSFET, rated ±20V VGS maximum with threshold VGS(th) of 1V min to 2.5V max at 250µA.
5 D passive Drain of the MOSFET, tied to pins 6, 7 and 8; VDS maximum 60V and pulsed drain current 20A.
6 D passive Drain of the MOSFET, tied to pins 5, 7 and 8; VDS maximum 60V.
7 D passive Drain of the MOSFET, tied to pins 5, 6 and 8; RDS(on) below 30mΩ at VGS=10V.
8 D passive Drain of the MOSFET, tied to pins 5, 6 and 7; RDS(on) below 35mΩ at VGS=4.5V.

Key specifications

Parameter Value
Manufacturer GOFORD
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 60V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 1 1.5 2.5 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 26 30 mΩ VGS = 10V, ID = 5A 2
Drain-Source On-Resistance RDS(on) 29 35 mΩ VGS = 4.5V, ID = 5A 2
Continuous Body Diode Current IS 5 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 5A, VGS = 0V 2
Drain-Source Voltage VDS 60 V TC = 25ºC 1
Continuous Drain Current ID 5 A TC = 25ºC 1
Pulsed Drain Current IDM 20 A TC = 25ºC, note 1 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 2.1 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W 1
Forward Transconductance gFS 11 S VGS = 5V, ID = 5A 2
Input Capacitance Ciss 1360 pF VGS = 0V, VDS = 30V, f = 1.0MHz 2
Output Capacitance Coss 52 pF VGS = 0V, VDS = 30V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 50 pF VGS = 0V, VDS = 30V, f = 1.0MHz 2
Total Gate Charge Qg 50 nC VDD = 30V, ID = 2.5A, VGS = 10V 2
Gate-Source Charge Qgs 8 nC VDD = 30V, ID = 2.5A, VGS = 10V 2
Gate-Drain Charge Qgd 16 nC VDD = 30V, ID = 2.5A, VGS = 10V 2
Turn-on Delay Time td(on) 8 ns VDD = 30V, ID = 2.5A, RG = 3Ω 2
Turn-on Rise Time tr 5 ns VDD = 30V, ID = 2.5A, RG = 3Ω 2
Turn-off Delay Time td(off) 29 ns VDD = 30V, ID = 2.5A, RG = 3Ω 2
Turn-off Fall Time tf 6 ns VDD = 30V, ID = 2.5A, RG = 3Ω 2
Reverse Recovery Charge Qrr 43 nC IF = 2.5A, VGS = 0V, di/dt=100A/us 2
Reverse Recovery Time Trr 35 ns IF = 2.5A, VGS = 0V, di/dt=100A/us 2

CAD (KiCad official)

  • Symbol: G08N06S-BQ
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: g08n06s-bq-etched.step / g08n06s-bq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g08n06s-bq.step / g08n06s-bq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 0223c71505100338, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF