component

G080N10T

Public Made by Adom

by adom

GOFORD MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsg080n10tfactory-2.0.0extractor-text

Verified G080N10T

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: G080N10T · TO-220 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-h1v0ysia/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ g080n10t.kicad_sym✓ g080n10t.kicad_mod✓ g080n10t.step
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Ray Publish 0.1.0 50c906d 7d ago

G080N10T

GOFORD · MOSFETs · TO-220

G080N10T from GOFORD, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input; gate-source voltage is rated at ±20 V maximum with a threshold of 1.0 V to 2.5 V.
2 D passive Drain, rated for 100 V drain-source voltage, 180 A continuous current and 720 A pulsed current, and connected to the mounting tab.
3 S passive Source terminal, with 180 A maximum continuous body diode current.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V TC = 25ºC 1
Continuous Drain Current ID 180 A TC = 25ºC 1
Pulsed Drain Current IDM 720 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 370 W TC = 25ºC 1
Single pulse avalanche energy EAS 361 mJ Tj=25℃, VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 62 ºC/W 1
Maximum Junction-to-Case RthJC 0.34 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 100V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 1 1.8 2.5 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 5.8 7.5 mΩ VGS = 10V, ID = 30A 2
Drain-Source On-Resistance RDS(on) 6.4 8 mΩ VGS = 4.5V, ID = 30A 2
Continuous Body Diode Current IS 180 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 30A, VGS = 0V 2
Forward Transconductance gFS 59 S VGS = 5V, ID = 30A 2
Input Capacitance Ciss 13912 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Output Capacitance Coss 435 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 363 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Total Gate Charge Qg 107 nC VDD = 50V, ID = 30A, VGS = 4.5V 2
Gate-Source Charge Qgs 33 nC VDD = 50V, ID = 30A, VGS = 4.5V 2
Gate-Drain Charge Qgd 55 nC VDD = 50V, ID = 30A, VGS = 4.5V 2
Turn-on Delay Time td(on) 91 ns VDD = 50V, ID = 30A, RG = 2.7Ω 2
Turn-on Rise Time tr 405 ns VDD = 50V, ID = 30A, RG = 2.7Ω 2
Turn-off Delay Time td(off) 135 ns VDD = 50V, ID = 30A, RG = 2.7Ω 2
Turn-off Fall Time tf 209 ns VDD = 50V, ID = 30A, RG = 2.7Ω 2
Reverse Recovery Charge Qrr 108 nC IF = 30A, VGS = 0V, di/dt=100A/us 2
Reverse Recovery Time Trr 61 ns IF = 30A, VGS = 0V, di/dt=100A/us 2

CAD (KiCad official)

  • Symbol: G080N10T
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: g080n10t-etched.step / g080n10t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g080n10t.step / g080n10t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 6179570860598215, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF