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G050N03S

Public Made by Adom

by adom

GOFORD MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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G050N03S

GOFORD · MOSFETs · SOP-8

G050N03S from GOFORD, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pins 1-3 are source).
2 S passive Source terminal of the N-channel MOSFET (pins 1-3 are source).
3 S passive Source terminal of the N-channel MOSFET (pins 1-3 are source).
4 G input Gate terminal; gate-source voltage limited to ±20 V with threshold of 1.1 V min to 2.4 V max.
5 D passive Drain terminal; drain-source voltage rated 30 V, continuous drain current 18 A.
6 D passive Drain terminal; drain-source voltage rated 30 V, continuous drain current 18 A.
7 D passive Drain terminal; drain-source voltage rated 30 V, continuous drain current 18 A.
8 D passive Drain terminal; drain-source voltage rated 30 V, continuous drain current 18 A.

Key specifications

Parameter Value
Manufacturer GOFORD
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TC = 25ºC 1
Continuous Drain Current ID 18 A TC = 25ºC 1
Pulsed Drain Current IDM 72 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 2.1 W TC = 25ºC 1
Single pulse avalanche energy EAS 64 mJ Tj=25℃, VDD=30V, VGS=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 59 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 1.1 1.7 2.4 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 4 5 mΩ VGS = 10V, ID = 10A 2
Drain-Source On-Resistance RDS(on) 6.9 8.5 mΩ VGS = 4.5V, ID = 10A 2
Continuous Body Diode Current IS 18 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 10A, VGS = 0V 2
Forward Transconductance gFS 30 S VGS = 5V, ID =10A 2
Input Capacitance Ciss 1714 pF VGS = 0V, VDS = 15V, f = 1.0MHz 2
Output Capacitance Coss 339 pF VGS = 0V, VDS = 15V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 326 pF VGS = 0V, VDS = 15V, f = 1.0MHz 2
Total Gate Charge Qg 37 nC VDD = 15V, ID = 10A, VGS = 10V 2
Gate-Source Charge Qgs 4.8 nC VDD = 15V, ID = 10A, VGS = 10V 2
Gate-Drain Charge Qgd 11 nC VDD = 15V, ID = 10A, VGS = 10V 2
Turn-on Delay Time td(on) 8.6 ns VDD = 15V, ID = 10A, RG = 3Ω 2
Turn-on Rise Time tr 8.1 ns VDD = 15V, ID = 10A, RG = 3Ω 2
Turn-off Delay Time td(off) 29 ns VDD = 15V, ID = 10A, RG = 3Ω 2
Turn-off Fall Time tf 8 ns VDD = 15V, ID = 10A, RG = 3Ω 2
Reverse Recovery Charge Qrr 40 nC IF = 10A, VGS = 0V, di/dt=500A/us 2
Reverse Recovery Time Trr 14 ns IF = 10A, VGS = 0V, di/dt=500A/us 2

CAD (KiCad official)

  • Symbol: G050N03S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: g050n03s-etched.step / g050n03s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g050n03s.step / g050n03s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 905c3a81935110c5, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF