component

G048N04T

Public Made by Adom

by adom

GOFORD MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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G048N04T

GOFORD · MOSFETs · TO-220

G048N04T from GOFORD, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with VGS rated ±20 V and a typical threshold of 1.7 V (1.0 to 2.5 V) at ID = 250 µA.
2 D passive Drain; rated for VDS of 40 V, continuous ID of 150 A and pulsed IDM of 600 A.
3 S passive Source; carries the 150 A continuous current and is the anode side of the body diode (VSD up to 1.2 V at 50 A).

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V TC = 25ºC 1
Continuous Drain Current ID 150 A TC = 25ºC 1
Pulsed Drain Current IDM 600 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 130 W TC = 25ºC 1
Single pulse avalanche energy EAS 306 mJ Tj=25℃, VDD=40V, VGS=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 50 ºC/W 1
Maximum Junction-to-Case RthJC 0.96 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS 40 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 40V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 1 1.7 2.5 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 2.6 3.3 mΩ VGS = 10V, ID = 50A 2
Drain-Source On-Resistance RDS(on) 3.6 4.5 mΩ VGS = 4.5V, ID = 50A 2
Continuous Body Diode Current IS 150 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 50A, VGS = 0V 2
Forward Transconductance gFS 70 S VGS = 5V, ID = 50A 2
Input Capacitance Ciss 6561 pF VGS = 0V, VDS = 20V, f = 1.0MHz 2
Output Capacitance Coss 593 pF VGS = 0V, VDS = 20V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 548 pF VGS = 0V, VDS = 20V, f = 1.0MHz 2
Total Gate Charge Qg 117 nC VDD = 20V, ID = 50A, VGS = 10V 2
Gate-Source Charge Qgs 18 nC VDD = 20V, ID = 50A, VGS = 10V 2
Gate-Drain Charge Qgd 29 nC VDD = 20V, ID = 50A, VGS = 10V 2
Turn-on Delay Time td(on) 20 ns VDD = 20V, ID = 50A, RG = 3Ω 2
Turn-on Rise Time tr 23 ns VDD = 20V, ID = 50A, RG = 3Ω 2
Turn-off Delay Time td(off) 68 ns VDD = 20V, ID = 50A, RG = 3Ω 2
Turn-off Fall Time tf 30 ns VDD = 20V, ID = 50A, RG = 3Ω 2
Reverse Recovery Charge Qrr 59 nC IF = 50A, VGS = 0V, di/dt=100A/us 2
Reverse Recovery Time Trr 55 ns IF = 50A, VGS = 0V, di/dt=100A/us 2

CAD (KiCad official)

  • Symbol: G048N04T
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: g048n04t-etched.step / g048n04t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g048n04t.step / g048n04t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 738469c82e7be4a3, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF