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FZT955-MS

MSKSEMI · Bipolar (BJT) · SOT-223

FZT955-MS from MSKSEMI, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives emitter-base breakdown VEBO of -6 V and emitter cut-off current IEBO of -10 nA max at VEB = -6 V.
2 COLLECTOR passive Collector terminal; continuous collector current IC is -4 A, peak pulse current ICM is -10 A, with VCEO of -140 V and VCBO of -180 V.
3 EMITTER passive Emitter terminal of the PNP transistor, rated with the emitter-base limit VEBO of -6 V.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-223
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -180 V 2
Collector-emitter voltage VCEO -140 V 2
Emitter-base voltage VEBO -6 V 2
Collector current - continuous IC -4 A 2
Peak pulse current ICM -10 A 2
Collector power dissipation PC 3 W 2
Thermal resistance, junction to ambient RθJA 78 °C/W Note 1: collector lead on 25mm x 25mm 1oz copper, single-sided 1.6mm FR4 PCB, still air, steady state 2
Operating and storage temperature range TJ,Tstg -55 150 °C 2
Collector-base breakdown voltage VCBO -180 V Ic= -100 µA, IE=0 2
Collector-emitter breakdown voltage VCER -180 V IC=-1 µA, RB ≤ 1kΩ 2
Collector-emitter breakdown voltage VCEO -140 V Ic= -10 mA, IB=0 2
Emitter-base breakdown voltage VEBO -6 V IE= -100 µA, IC=0 2
Collector-base cut-off current ICBO -50 nA VCB= -150 V, IE=0 2
Collector-base cut-off current ICBO -1 µA VCB= -150 V, IE=0, Ta = 100°C 2
Collector cut-off current ICER -50 nA VCE= -150 V, IE=0 2
Collector cut-off current ICER -1 µA VCE= -150 V, IE=0, Ta = 100°C 2
Emitter cut-off current IEBO -10 nA VEB= -6V, IC=0 2
Collector-emitter saturation voltage VCE(sat) -60 mV IC=-100 mA, IB=-5 mA 2
Collector-emitter saturation voltage VCE(sat) -120 mV IC=-500 mA, IB=-50mA 2
Collector-emitter saturation voltage VCE(sat) -150 mV IC=-1 A, IB=-100mA 2
Collector-emitter saturation voltage VCE(sat) -370 mV IC=-3 A, IB=-300mA 2
Base-emitter saturation voltage VBE(sat) -1110 mV IC=-3 A, IB=-300mA 2
Base-emitter turn-on voltage VBE(on) -950 mV VCE= -5V, IC= -3A 2
DC current gain hFE 100 VCE= -5V, IC= -10mA 2
DC current gain hFE 100 300 VCE=- 5V, IC= -1 A 2
DC current gain hFE 75 VCE= -5V, IC= -3 A 2
DC current gain hFE 10 VCE= -5V, IC= -10 A 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper Note 1:For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; 2

CAD (KiCad official)

  • Symbol: FZT955-MS
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT-223 (KiCad packages3D, STEP)
  • 3D model files: fzt955-ms-etched.step / fzt955-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fzt955-ms.step / fzt955-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (5 pp, sha256 c1e10a62cf8377b7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF