component
FZT955
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFZT955
Changjing · Bipolar (BJT) · SOT-223
FZT955 from Changjing, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet specifies VBE(sat) of -1.11 V max at IC=-3A, IB=-300mA. |
| 2 | COLLECTOR | passive | Collector terminal; the datasheet rates it for a collector current IC of -4 A, collector-emitter voltage VCEO of -140 V and collector power dissipation PC of 0.8 W. |
| 3 | EMITTER | passive | Emitter terminal; the datasheet gives an emitter-base voltage VEBO of -6 V for this device. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -180 | V | IC=-0.1mA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -140 | V | IC=-10mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -6 | V | IE=-0.1mA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | -50 | nA | VCB=-150V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -10 | nA | VEB=-6V,IC=0 | 1 | ||
| DC current gain hFE(1) | hFE(1) | 100 | VCE=-5V, IC=-10mA | 1 | |||
| DC current gain hFE(2) | hFE(2) | 100 | 300 | VCE=-5V, IC=-1A | 1 | ||
| DC current gain hFE(3) | hFE(3) | 75 | VCE=-5V, IC=-3A | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -60 | mV | IC=-100mA,IB=-5mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -120 | mV | IC=-500mA,IB=-50mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -150 | mV | IC=-1A,IB=-100mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -370 | mV | IC=-3A,IB=-300mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.11 | V | IC=-3A,IB=-300mA | 1 | ||
| Base-emitter voltage | VBE | -0.95 | V | VCE=-5V, IC=-3A | 1 | ||
| Collector output capacitance | Cob | 40 | pF | VCB=-20V, IE=0, f=1MHz | 1 | ||
| Turn-on time | t on | 68 | ns | VCC=-50V, IC=-1A, IB1=IB2=-100mA | 1 | ||
| Turn-off time | t off | 1030 | ns | VCC=-50V, IC=-1A, IB1=IB2=-100mA | 1 | ||
| Collector-base voltage | VCBO | -180 | V | 1 | |||
| Collector-emitter voltage | VCEO | -140 | V | 1 | |||
| Emitter-base voltage | VEBO | -6 | V | 1 | |||
| Collector current | IC | -4 | A | 1 | |||
| Collector power dissipation | PC | 0.8 | W | 1 | |||
| Thermal resistance from junction to ambient | RθJA | 156 | ℃/W | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
FZT955 - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
fzt955-etched.step/fzt955-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fzt955.step/fzt955.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
572340ab5f9e2f25, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).