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FW356-TL-E-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownFW356-TL-E-VB
VBsemi Elec · MOSFETs · SO-8
FW356-TL-E-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-Channel MOSFET (60 V VDS, 5.3 A ID rating). |
| 2 | G1 | input | Gate of the N-Channel MOSFET (VGS ±20 V max, threshold 1 to 3 V). |
| 3 | S2 | passive | Source of the P-Channel MOSFET (-60 V VDS, -4.9 A ID rating). |
| 4 | G2 | input | Gate of the P-Channel MOSFET (VGS ±20 V max, threshold -1 to -3 V). |
| 5 | D2 | passive | Drain of the P-Channel MOSFET, internally tied to pin 6 (-60 V VDS max). |
| 6 | D2 | passive | Drain of the P-Channel MOSFET, internally tied to pin 5 (-60 V VDS max). |
| 7 | D1 | passive | Drain of the N-Channel MOSFET, internally tied to pin 8 (60 V VDS max). |
| 8 | D1 | passive | Drain of the N-Channel MOSFET, internally tied to pin 7 (60 V VDS max). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 60 | V | TA = 25 °C | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -60 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (N-Ch) | RthJA | 55 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient (P-Ch) | RthJA | 53 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Maximum Junction-to-Foot (N-Ch) | RthJF | 33 | 40 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Foot (P-Ch) | RthJF | 30 | 37 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage (N-Ch) | VDS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage (P-Ch) | VDS | -60 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate Threshold Voltage (N-Ch) | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate Threshold Voltage (P-Ch) | VGS(th) | -3 | -1 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Body Leakage (N-Ch) | IGSS | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Gate-Body Leakage (P-Ch) | IGSS | -100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | µA | VDS = - 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch, hot) | IDSS | 10 | µA | VDS = 60 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch, hot) | IDSS | -10 | µA | VDS = - 60 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current (N-Ch) | ID(on) | 20 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current (P-Ch) | ID(on) | -25 | A | VDS ≤ - 5 V, VGS = - 10 V | 2 | ||
| Drain-Source On-State Resistance (N-Ch) | RDS(on) | 0.029 | Ω | VGS = 4.5 V, ID = 3.9 A | 2 | ||
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 0.055 | Ω | VGS = - 10 V, ID = - 3.1 A | 2 | ||
| Drain-Source On-State Resistance (P-Ch) | RDS(on) | 0.06 | Ω | VGS = - 4.5 V, ID = - 0.2 A | 2 | ||
| Total Gate Charge (N-Ch) | Qg | 13 | 20 | nC | VDS = 30 V, VGS = 10 V, ID = 4.3 A | 2 | |
| Total Gate Charge (P-Ch) | Qg | 14.5 | 22 | nC | VDS = - 30 V, VGS = - 10 V, ID = - 3.1 A | 2 | |
| Gate Resistance (N-Ch) | Rg | 2 | 3 | Ω | f = 1 MHz | 2 | |
| Gate Resistance (P-Ch) | Rg | 14 | 20 | Ω | f = 1 MHz | 2 | |
| Turn-On Delay Time (N-Ch) | td(on) | 15 | 25 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time (P-Ch) | td(on) | 30 | 45 | ns | VDD = - 30 V, RL = 12.5 Ω, ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω | 3 | |
| Rise Time (N-Ch) | tr | 65 | 100 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Rise Time (P-Ch) | tr | 70 | 105 | ns | VDD = - 30 V, RL = 12.5 Ω, ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time (N-Ch) | td(off) | 15 | 25 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Turn-Off Delay Time (P-Ch) | td(off) | 40 | 60 | ns | VDD = - 30 V, RL = 12.5 Ω, ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω | 3 | |
| Fall Time (N-Ch) | tf | 10 | 15 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 4.5 V, Rg = 1 Ω | 3 | |
| Fall Time (P-Ch) | tf | 30 | 45 | ns | VDD = - 30 V, RL = 12.5 Ω, ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time (N-Ch) | td(on) | 10 | 15 | ns | VDD = 30 V, RL = 8.8 Ω, ID ≅ 3.4 A, VGEN = 10 V, Rg = 1 Ω | 3 | |
| Turn-On Delay Time (P-Ch) | td(on) | 10 | 15 | ns | VDD = - 30 V, RL = 12.5 Ω, ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω | 3 | |
| Body Diode Voltage (N-Ch) | VSD | 0.8 | 1.2 | V | IS = 1.7 A | 3 | |
| Body Diode Voltage (P-Ch) | VSD | -0.8 | -1.2 | V | IS = - 2 A | 3 | |
| Body Diode Reverse Recovery Time (N-Ch) | trr | 30 | 60 | ns | IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Time (P-Ch) | trr | 30 | 50 | ns | IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Charge (N-Ch) | Qrr | 32 | 50 | nC | IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C | 3 | |
| Body Diode Reverse Recovery Charge (P-Ch) | Qrr | 35 | 60 | nC | IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
FW356-TL-E-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fw356-tl-e-vb-etched.step/fw356-tl-e-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fw356-tl-e-vb.step/fw356-tl-e-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
a90522c3ee31bd04, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).