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FT231XQ-T

FTDI · USB ICs · QFN-20-EP(4x4)

FT231XQ-T from FTDI, in a QFN-20-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 RXD input Receiving asynchronous data input.
2 RI# input Ring Indicator input for remote wake up.
3 GND power_in 0V ground input.
4 DSR# input Data Set Ready control input / handshake signal.
5 DCD# input Data Carrier Detect control input.
6 CTS# input Clear To Send control input / handshake signal.
7 CBUS2 bidirectional Configurable CBUS I/O pin whose function is set in the MTP memory; default configuration is TXLED#.
8 USBDP bidirectional USB Data Signal Plus.
9 USBDM bidirectional USB Data Signal Minus.
10 3V3OUT power_out 3V3 output at 50mA that may be used to power VCCIO; when VCC is 3V3 this pin is an input and should be connected to pin 12.
11 RESET# input Reset input (active low).
12 VCC power_in 5 V or 3V3 supply to the IC; if VCC is 3V3 then 3V3OUT must also be driven with 3V3.
13 GND power_in 0V ground input.
14 CBUS1 bidirectional Configurable CBUS I/O pin whose function is set in the MTP memory; default configuration is RXLED#.
15 CBUS0 bidirectional Configurable CBUS I/O pin whose function is set in the MTP memory; default configuration is TXDEN.
16 CBUS3 bidirectional Configurable CBUS I/O pin whose function is set in the MTP memory; default configuration is SLEEP#.
17 TXD output Transmit asynchronous data output.
18 DTR# output Data Terminal Ready control output / handshake signal.
19 RTS# output Request to Send control output / handshake signal.
20 VCCIO power_in 1V8 to 3V3 supply for the IO cells.
21 GND power_in Exposed pad under the centre of the package, to be connected to GND.

Key specifications

Parameter Value
Manufacturer FTDI
Package QFN-20-EP(4x4)
Category Interface ICs
Pins 21

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage Temperature -65 150 °C 16
Ambient Operating Temperature (Power Applied) -40 85 °C Power Applied 16
VCC Supply Voltage VCC -0.3 5.5 V 16
VCCIO IO Voltage VCCIO -0.3 4 V 16
DC Input Voltage, USBDP and USBDM -0.5 3.63 V 16
DC Input Voltage, High Impedance Bi-directionals -0.3 5.8 V powered from VCCIO 16
DC Output Current, Outputs 22 mA 16
VCC Operating Supply Voltage VCC 2.97 5 5.5 V Normal Operation 17
VCCIO Operating Supply Voltage VCCIO 1.62 3.63 V 17
Operating Supply Current Icc1 8 8 8.4 mA Normal Operation 17
Operating Supply Current (USB Suspend) Icc2 125 μA USB Suspend 17
3.3v regulator output 3V3 2.97 3.3 3.63 V VCC must be greater than 3V3 otherwise 3V3OUT is an input which must be driven with 3.3V 17
Output Voltage High (VCCIO=3.3V) Voh 2.97 V Ioh = +/-2mA; I/O Drive strength = 4mA 18
Output Voltage Low (VCCIO=3.3V) Vol 0 0.4 V Iol = +/-2mA; I/O Drive strength = 4mA 18
Input low Switching Threshold (VCCIO=3.3V) Vil 0.8 V LVTTL 18
Input High Switching Threshold (VCCIO=3.3V) Vih 2 V LVTTL 18
Input pull-up resistance (VCCIO=3.3V) Rpu 40 75 190 KΩ Vin = 0 18
Input pull-down resistance (VCCIO=3.3V) Rpd 40 75 190 KΩ Vin =VCCIO 18
Input Leakage Current (VCCIO=3.3V) Iin -10 1 10 μA Vin = 0 18
Tri-state output leakage current (VCCIO=3.3V) Ioz -10 1 10 μA Vin = 5.5V or 0 18
Output Voltage High (VCCIO=2.5V) Voh 2.25 V Ioh = +/-2mA; I/O Drive strength = 4mA 19
Output Voltage Low (VCCIO=2.5V) Vol 0 0.4 V Iol = +/-2mA; I/O Drive strength = 4mA 19
Input low Switching Threshold (VCCIO=2.5V) Vil 0.8 V LVTTL 19
Input High Switching Threshold (VCCIO=2.5V) Vih 0.8 V LVTTL 19
Input pull-up resistance (VCCIO=2.5V) Rpu 40 75 190 KΩ Vin = 0 19
Input pull-down resistance (VCCIO=2.5V) Rpd 40 75 190 KΩ Vin =VCCIO 19
Input Leakage Current (VCCIO=2.5V) Iin -10 1 10 μA Vin = 0 19
Tri-state output leakage current (VCCIO=2.5V) Ioz -10 1 10 μA Vin = 5.5V or 0 19
Output Voltage High (VCCIO=1.8V) Voh 1.62 V Ioh = +/-2mA; I/O Drive strength = 4mA 20
Output Voltage Low (VCCIO=1.8V) Vol 0 0.4 V Iol = +/-2mA; I/O Drive strength = 4mA 20
Input low Switching Threshold (VCCIO=1.8V) Vil 0.77 V LVTTL 20
Input High Switching Threshold (VCCIO=1.8V) Vih 1.6 V LVTTL 20
Input pull-up resistance (VCCIO=1.8V) Rpu 40 75 190 KΩ Vin = 0 20
Input pull-down resistance (VCCIO=1.8V) Rpd 40 75 190 KΩ Vin =VCCIO 20
Input Leakage Current (VCCIO=1.8V) Iin -10 1 10 μA Vin = 0 20
Tri-state output leakage current (VCCIO=1.8V) Ioz -10 1 10 μA Vin = 5.5V or 0 20
Output Voltage Low (USBDP, USBDM) Vol 0.2 V 21
Input low Switching Threshold (USBDP, USBDM) Vil 0.8 V 21
Input High Switching Threshold (USBDP, USBDM) Vih 2 V 21
Frequency of Operation 11.98 12 12.02 MHz see Note 1 21
Clock Period 83.19 83.33 83.47 ns 21
Duty Cycle 45 50 55 % 21
Switching Threshold (VCCIO=3.3V) Vt 1.49 V LVTTL 18
Switching Threshold (VCCIO=2.5V) Vt 1.1 V LVTTL 19
Switching Threshold (VCCIO=1.8V) Vt 0.77 V LVTTL 20

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing Abs ESD Human Body Mode (HDM) 2000 V Class 2 Table 5.1 Absolute Maximum Ratings 16

CAD (KiCad official)

  • Symbol: FT231XQ-T
  • Footprint: Package_DFN_QFN:QFN-20-1EP_4x4mm_P0.5mm_EP2.5x2.5mm
  • 3D model: QFN-20-EP(4x4) (KiCad packages3D, STEP)
  • 3D model files: ft231xq-t-etched.step / ft231xq-t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ft231xq-t.step / ft231xq-t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FTDI datasheet (44 pp, sha256 8999a05c9ad906a0, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF