component

FSS2301M

Public Made by Adom

by adom

FOSAN MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 22d ago
viewers fss2301m: viewers · Ray 22d ago
fss2301m-etched.glb fss2301m: factory component page (tier=lcsc) · Ray 22d ago
fss2301m-etched.step fss2301m: factory component page (tier=lcsc) · Ray 22d ago
fss2301m-hero.glb fss2301m: hero GLB from the etched model (keeps the MPN mark) · Ray 22d ago
fss2301m-hero.overlay.json Publish 0.1.0 · Ray 22d ago
fss2301m.glb Publish 0.1.0 · Ray 22d ago
fss2301m.kicad_mod Publish 0.1.0 · Ray 22d ago
fss2301m.kicad_sym Publish 0.1.0 · Ray 22d ago
fss2301m.lbr Publish 0.1.0 · Ray 22d ago
fss2301m.step Publish 0.1.0 · Ray 22d ago
package.json Publish 0.1.0 · Ray 22d ago
page.json fss2301m: specified limits as data (metadata.characteristics, 14 rows from the datasheet) · Ray 16d ago
README.md fss2301m: specified limits as data (metadata.characteristics, 14 rows from the datasheet) · Ray 16d ago

FSS2301M

FOSAN · MOSFETs · SOT-23

FSS2301M from FOSAN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is limited to ±10 V, with a threshold VGS(th) of -0.4 to -1 V at ID = -250 uA.
2 S passive Source of the P-channel MOSFET; the body diode forward drop VSD is at most -1.2 V at ISD = -2 A.
3 D passive Drain; drain-source voltage is rated -20 V, with continuous drain current of -2.8 A and pulsed drain current of -8 A.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -20 V ID = -250uA, VGS=0V 2
Gate Threshold Voltage VGS(th) -0.4 -0.6 -1 V ID = -250uA, VGS= VDS 2
Zero Gate Voltage Drain Current IDSS 1 uA VGS=0V, VDS= -20V 2
Gate Body Leakage IGSS 100 nA VGS=+10V, VDS=0V 2
Static Drain-Source On-State Resistance RDS(ON) 86 115 mΩ ID= -2A, VGS= -4.5V 2
Static Drain-Source On-State Resistance RDS(ON) 120 150 mΩ ID= -1.5A, VGS= -2.5V 2
Static Drain-Source On-State Resistance RDS(ON) 165 250 mΩ ID= -1A, VGS= -1.8V 2
Diode Forward Voltage Drop VSD -1.2 V ISD= -2A, VGS=0V 2
Drain Current (continuous) ID -2.8 A TC = 25°C 1
Drain Current (pulsed) IDM -8 A 1
Gate-Source Voltage VGS 10 V 1
Total Device Dissipation PD 700 mW TA = 25°C 1
Junction/Storage Temperature TJ,Tstg -55 150 ℃ 1
Thermal Resistance Junction-Ambient RΘJA 178 ℃/W 1

CAD (KiCad official)

  • Symbol: FSS2301M
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fss2301m-etched.step / fss2301m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fss2301m.step / fss2301m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (4 pp, sha256 ea6d99f075ed1a57, retrieved 2026-10-09, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF