component
FS80H150C
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FUXINSEMI Schottky Diodes, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FS80H150C
FUXINSEMI · Schottky Diodes · TO-247-3
FS80H150C from FUXINSEMI, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode (Pin 1); each diode is rated 40.0A average forward current, 150V VRRM. |
| 2 | K | passive | Common cathode of both diodes (Pin 2), internally connected to the case/mounting tab. |
| 3 | A2 | passive | Anode of the second Schottky diode (Pin 3); each diode is rated 40.0A average forward current, 150V VRRM. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | TO-247-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | 150 | V | 1 | |||
| Peak forward surge current, 8.3ms single half sine-wave | IFSM | 300 | A | 8.3ms single half sine-wave superimposed on rated load | 1 | ||
| Maximum average forward rectified current, per device | I(AV) | 80 | A | TC=120 C, per device | 1 | ||
| Maximum average forward rectified current, per diode | I(AV) | 40 | A | TC=120 C, per diode | 1 | ||
| Maximum RMS voltage | VRMS | 105 | V | 1 | |||
| Maximum DC blocking voltage | VDC | 150 | V | 1 | |||
| Operating junction temperature range | TJ | -55 | 175 | C | 1 | ||
| Storage temperature range | TSTG | -55 | 150 | C | 1 |
CAD (KiCad official)
- Symbol:
FS80H150C - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
fs80h150c-etched.step/fs80h150c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fs80h150c.step/fs80h150c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FUXINSEMI datasheet (2 pp, sha256
2aa6aafcbc05e9bf, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FS80H150C
**FUXINSEMI** · Schottky Diodes · TO-247-3
FS80H150C from FUXINSEMI, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A1 | passive | Anode of the first Schottky diode (Pin 1); each diode is rated 40.0A average forward current, 150V VRRM. |
| 2 | K | passive | Common cathode of both diodes (Pin 2), internally connected to the case/mounting tab. |
| 3 | A2 | passive | Anode of the second Schottky diode (Pin 3); each diode is rated 40.0A average forward current, 150V VRRM. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FUXINSEMI |
| Package | TO-247-3 |
| Category | Diodes |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum repetitive peak reverse voltage | VRRM | | | 150 | V | | 1 |
| Peak forward surge current, 8.3ms single half sine-wave | IFSM | | | 300 | A | 8.3ms single half sine-wave superimposed on rated load | 1 |
| Maximum average forward rectified current, per device | I(AV) | | | 80 | A | TC=120 C, per device | 1 |
| Maximum average forward rectified current, per diode | I(AV) | | | 40 | A | TC=120 C, per diode | 1 |
| Maximum RMS voltage | VRMS | | | 105 | V | | 1 |
| Maximum DC blocking voltage | VDC | | | 150 | V | | 1 |
| Operating junction temperature range | TJ | -55 | | 175 | C | | 1 |
| Storage temperature range | TSTG | -55 | | 150 | C | | 1 |
## CAD (KiCad official)
- Symbol: `FS80H150C`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `fs80h150c-etched.step` / `fs80h150c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fs80h150c.step` / `fs80h150c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [FUXINSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590922790512250880) (2 pp, sha256 `2aa6aafcbc05e9bf`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fs80h150c-datasheet.pdf)