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FS4953

FOSAN · MOSFETs · SOP-8

FS4953 from FOSAN, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of P-channel MOSFET 2 (pin-1 corner, bottom-left in the schematic view); VDS/BVDSS rating is -30 V.
2 G2 input Gate of P-channel MOSFET 2; VGS absolute maximum is ±20 V and threshold is -1 V to -2.3 V at ID = -250 uA.
3 S1 passive Source of P-channel MOSFET 1; continuous drain current is -4.9 A at TA = 25°C.
4 G1 input Gate of P-channel MOSFET 1; VGS absolute maximum is ±20 V and threshold is -1 V to -2.3 V at ID = -250 uA.
5 D1 passive Drain of P-channel MOSFET 1, shorted internally to pin 6; pulsed drain current is -20 A.
6 D1 passive Drain of P-channel MOSFET 1, shorted internally to pin 5; RDS(ON) is 36 mΩ typ at VGS = -10 V.
7 D2 passive Drain of P-channel MOSFET 2, shorted internally to pin 8; pulsed drain current is -20 A.
8 D2 passive Drain of P-channel MOSFET 2, shorted internally to pin 7; RDS(ON) is 36 mΩ typ at VGS = -10 V.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS -30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current (continuous) ID -4.9 A TA = 25°C 1
Drain Current (pulsed) IDM -20 A 1
Total Device Dissipation PTOT 1.2 W at TA = 25°C 1
Total Device Dissipation PTOT 0.8 W at TA = 100°C 1
Thermal Resistance Junction-Ambient RΘJA 105 ℃/W 1
Avalanche Energy Single Pulse EAS 15 mJ single pulse 1
Junction/Storage Temperature TJ,Tstg -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS -30 V ID = -250uA, VGS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.5 -2.3 V ID = -250uA, VGS = VDS 2
Zero Gate Voltage Drain Current IDSS -1 uA VGS=0V, VDS= -24V 2
Gate Body Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Static Drain-Source On-State Resistance RDS(ON) 36 50 mΩ ID= -4.9A, VGS= -10V 2
Static Drain-Source On-State Resistance RDS(ON) 45 65 mΩ ID= -3A, VGS= -4.5V 2
Diode Forward Voltage Drop VSD -0.8 -1.3 V ISD= -1.7A, VGS=0V 2

CAD (KiCad official)

  • Symbol: FS4953
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fs4953-etched.step / fs4953-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fs4953.step / fs4953.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (5 pp, sha256 0da5d750ab635602, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF