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Ray Publish 0.1.0 251620c 16d ago

FS4805

FOSAN · MOSFETs · SOP-8

FS4805 from FOSAN, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of P-channel MOSFET 2, with drain-source breakdown of -30 V.
2 G2 input Gate of P-channel MOSFET 2, with maximum gate-source voltage of ±20 V and threshold of -1.3 to -2.3 V.
3 S1 passive Source of P-channel MOSFET 1, with drain-source breakdown of -30 V.
4 G1 input Gate of P-channel MOSFET 1, with maximum gate-source voltage of ±20 V and threshold of -1.3 to -2.3 V.
5 D1 passive Drain of P-channel MOSFET 1, rated -8.9 A continuous at TA=25°C and -35 A pulsed (tied internally to pin 6).
6 D1 passive Drain of P-channel MOSFET 1, rated -8.9 A continuous at TA=25°C and -35 A pulsed (tied internally to pin 5).
7 D2 passive Drain of P-channel MOSFET 2, rated -8.9 A continuous at TA=25°C and -35 A pulsed (tied internally to pin 8).
8 D2 passive Drain of P-channel MOSFET 2, rated -8.9 A continuous at TA=25°C and -35 A pulsed (tied internally to pin 7).

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage (absolute maximum rating) BVDSS -30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current (continuous) ID -8.9 A TA = 25°C 1
Drain Current (continuous) ID -7.1 A TA = 70°C 1
Drain Current (pulsed) IDM -35 A 1
Total Device Dissipation PTOT 2.5 W TA = 25°C 1
Total Device Dissipation PTOT 1.6 W TA = 70°C 1
Thermal Resistance Junction-Ambient RΘJA 50 ℃/W 1
Avalanche Energy Single Pulse EAS 29 mJ 1
Junction/Storage Temperature TJ,Tstg -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS -30 V ID = -250uA, VGS=0V 2
Gate Threshold Voltage VGS(th) -1.3 -1.8 -2.3 V ID = -250uA, VGS= VDS 2
Zero Gate Voltage Drain Current IDSS -1 uA VGS=0V, VDS= -24V 2
Gate Body Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Static Drain-Source On-State Resistance RDS(ON) 15 21 mΩ ID= -8.9A, VGS= -10V 2
Static Drain-Source On-State Resistance RDS(ON) 22 30 mΩ ID= -5.6A, VGS= -4.5V 2
Diode Forward Voltage Drop VSD -0.7 -1 V ISD= -1A, VGS=0V 2

CAD (KiCad official)

  • Symbol: FS4805
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fs4805-etched.step / fs4805-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fs4805.step / fs4805.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (5 pp, sha256 cc10b9854ba455be, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF