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FS4612

FOSAN · MOSFETs · SOP-8

FS4612 from FOSAN, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2, bottom-left pin next to the pin-1 dot in the internal schematic.
2 G2 input Gate of MOSFET 2; VGS limit is ±20 V.
3 S1 passive Source of MOSFET 1.
4 G1 input Gate of MOSFET 1; VGS limit is ±20 V.
5 D1 passive Drain of MOSFET 1, shorted to pin 6 in the internal schematic.
6 D1 passive Drain of MOSFET 1, shorted to pin 5 in the internal schematic.
7 D2 passive Drain of MOSFET 2, shorted to pin 8 in the internal schematic.
8 D2 passive Drain of MOSFET 2, shorted to pin 7 in the internal schematic.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage (N-channel) BVDSS 60 V ID=250uA, VGS=0V 2
Gate Threshold Voltage (N-channel) VGS(th) 1 1.3 2 V ID=250uA, VGS=VDS 2
Zero Gate Voltage Drain Current (N-channel) IDSS 1 uA VGS=0V, VDS=60V 2
Gate Body Leakage (N-channel) IGSS 100 nA VGS=+20V, VDS=0V 2
Static Drain-Source On-State Resistance (N-channel, VGS=10V) RDS(ON) 33 56 mΩ ID=4.5A, VGS=10V 2
Static Drain-Source On-State Resistance (N-channel, VGS=4.5V) RDS(ON) 42 65 mΩ ID=3A, VGS=4.5V 2
Diode Forward Voltage Drop (N-channel body diode) VSD 0.74 1 V ISD=1A, VGS=0V 2
Drain-Source Breakdown Voltage (P-channel) BVDSS -60 V ID=-250uA, VGS=0V 3
Gate Threshold Voltage (P-channel) VGS(th) -1 -1.65 -3 V ID=-250uA, VGS=VDS 3
Zero Gate Voltage Drain Current (P-channel) IDSS -1 uA VGS=0V, VDS=-60V 3
Gate Body Leakage (P-channel) IGSS 100 nA VGS=+20V, VDS=0V 3
Static Drain-Source On-State Resistance (P-channel, VGS=-10V) RDS(ON) 75 95 mΩ ID=-3.2A, VGS=-10V 3
Static Drain-Source On-State Resistance (P-channel, VGS=-4.5V) RDS(ON) 85 105 mΩ ID=-2.8A, VGS=-4.5V 3
Diode Forward Voltage Drop (P-channel body diode) VSD -0.73 -1 V ISD=-1A, VGS=0V 3
Drain-Source Voltage (N-channel) BVDSS 60 V 1
Drain-Source Voltage (P-channel) BVDSS -60 V 1
Gate-Source Voltage (N-channel) VGS 20 V 1
Gate-Source Voltage (P-channel) VGS 20 V 1
Drain Current continuous (N-channel) ID 4.5 A TA = 25°C 1
Drain Current continuous (N-channel) ID 3.6 A TA = 70°C 1
Drain Current continuous (P-channel) ID -3.2 A TA = 25°C 1
Drain Current continuous (P-channel) ID -2.5 A TA = 70°C 1
Drain Current pulsed (N-channel) IDM 20 A 1
Drain Current pulsed (P-channel) IDM -20 A 1
Total Device Dissipation PTOT 2 W TA = 25°C 1
Total Device Dissipation PTOT 1.3 W TA = 70°C 1
Thermal Resistance Junction-Ambient RΘJA 62.5 ℃/W 1
Avalanche Energy Single Pulse EAS 25 mJ Single pulse 1
Junction/Storage Temperature TJ,Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: FS4612
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fs4612-etched.step / fs4612-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fs4612.step / fs4612.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (8 pp, sha256 8cc50bc87af1cc9d, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF