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FS4485

Public Made by Adom

by adom

FOSAN MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FS4485

FOSAN · MOSFETs · SOP-8

FS4485 from FOSAN, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, one of three paralleled source pins (pins 1-3); the datasheet gives a drain-source rating of -40 V.
2 S passive Source of the P-channel MOSFET, one of three paralleled source pins (pins 1-3); the datasheet gives a continuous drain current of -12 A at TA=25°C.
3 S passive Source of the P-channel MOSFET, one of three paralleled source pins (pins 1-3); the datasheet gives a pulsed drain current of -52 A.
4 G input Gate of the P-channel MOSFET; the datasheet gives a maximum gate-source voltage of ±20 V and a threshold of -1 V to -2.2 V at ID=-250uA.
5 D passive Drain of the P-channel MOSFET, one of four paralleled drain pins (pins 5-8); the datasheet gives a drain-source rating of -40 V.
6 D passive Drain of the P-channel MOSFET, one of four paralleled drain pins (pins 5-8); the datasheet gives a continuous drain current of -12 A at TA=25°C.
7 D passive Drain of the P-channel MOSFET, one of four paralleled drain pins (pins 5-8); the datasheet gives a pulsed drain current of -52 A.
8 D passive Drain of the P-channel MOSFET, one of four paralleled drain pins (pins 5-8); the datasheet gives an RDS(ON) of 13 mΩ typical at VGS=-10V.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS -40 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current (continuous) ID -12 A TA = 25°C 1
Drain Current (pulsed) IDM -52 A 1
Total Device Dissipation PTOT 3 W TA = 25°C 1
Thermal Resistance Junction-Ambient RΘJA 41 ℃/W 1
Avalanche Energy Single Pulse EAS 80 mJ VDD= -25V, VGS= -10V, L= 0.1mH, IAS= -34A 1
Junction/Storage Temperature TJ,Tstg -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS -40 V ID = -250uA, VGS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.5 -2.2 V ID = -250uA, VGS= VDS 2
Zero Gate Voltage Drain Current IDSS -1 uA VGS=0V, VDS= -40V 2
Gate Body Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Static Drain-Source On-State Resistance RDS(ON) 13 16 mΩ ID= -10A, VGS= -10V 2
Static Drain-Source On-State Resistance RDS(ON) 17.5 23 mΩ ID= -5A, VGS= -4.5V 2
Diode Forward Voltage Drop VSD -1.2 V ISD= -10A, VGS=0V 2

CAD (KiCad official)

  • Symbol: FS4485
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fs4485-etched.step / fs4485-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fs4485.step / fs4485.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (5 pp, sha256 4afe52279c646064, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF