component

FS4446A

Public Made by Adom

by adom

FOSAN MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfs4446afactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
fs4446a / README.md
History Download
Ray Publish 0.1.0 2e12322 23d ago

FS4446A

FOSAN · MOSFETs · SOP-8

FS4446A from FOSAN, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied internally with pins 2 and 3.
2 S passive Source of the N-channel MOSFET, tied internally with pins 1 and 3.
3 S passive Source of the N-channel MOSFET, tied internally with pins 1 and 2.
4 G input Gate of the N-channel MOSFET; VGS maximum ±20 V and threshold VGS(th) 1.0 V min, 1.5 V typ, 3.0 V max at ID=250uA.
5 D passive Drain of the N-channel MOSFET, tied internally with pins 6, 7 and 8; BVDSS 30 V, continuous ID 15 A at TA=25°C.
6 D passive Drain of the N-channel MOSFET, tied internally with pins 5, 7 and 8; BVDSS 30 V, pulsed IDM 40 A.
7 D passive Drain of the N-channel MOSFET, tied internally with pins 5, 6 and 8; RDS(ON) 6.5 mΩ typ at VGS=10V.
8 D passive Drain of the N-channel MOSFET, tied internally with pins 5, 6 and 7; RDS(ON) 10 mΩ typ at VGS=4.5V.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS 30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current (continuous) ID 15 A TA = 25°C 1
Drain Current (continuous) ID 12 A TA = 70°C 1
Drain Current (pulsed) IDM 40 A 1
Total Device Dissipation PTOT 3 W TA = 25°C 1
Total Device Dissipation PTOT 2.1 W TA = 70°C 1
Junction/Storage Temperature TJ,Tstg -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 30 V ID=250uA, VGS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 3 V ID=250uA, VGS=VDS 2
Zero Gate Voltage Drain Current IDSS 1 uA VGS=0V, VDS=24V 2
Gate Body Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Static Drain-Source On-State Resistance RDS(ON) 6.5 8 mΩ ID=15A, VGS=10V 2
Static Drain-Source On-State Resistance RDS(ON) 10 18 mΩ ID=11A, VGS=4.5V 2
Diode Forward Voltage Drop VSD 0.71 1 V ISD=1A, VGS=0V 2
Total Gate Charge Qg 16 20.8 nC VDS=15V, ID=14A, VGS=4.5V 2
Gate Source Charge Qgs 5 6.5 nC VDS=15V, ID=14A, VGS=4.5V 2
Gate Drain Charge Qgd 3 3.9 nC VDS=15V, ID=14A, VGS=4.5V 2
Turn-ON Delay Time td(on) 17 34 ns VDS=15V, ID=14A, RGEN=6Ω, VGS=10V 2
Turn-ON Rise Time tr 5 10 ns VDS=15V, ID=14A, RGEN=6Ω, VGS=10V 2
Turn-OFF Delay Time td(off) 50 100 ns VDS=15V, ID=14A, RGEN=6Ω, VGS=10V 2
Turn-OFF Fall Time tf 10 20 ns VDS=15V, ID=14A, RGEN=6Ω, VGS=10V 2
Thermal Resistance Junction-Ambient RΘJA 42 ℃/W 1

CAD (KiCad official)

  • Symbol: FS4446A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fs4446a-etched.step / fs4446a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fs4446a.step / fs4446a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (5 pp, sha256 fa291e9fa3cbd663, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF