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Contents

README

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FS4409

FOSAN · MOSFETs · SOP-8

FS4409 from FOSAN, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied internally with pins 2 and 3.
2 S passive Source of the P-channel MOSFET, tied internally with pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied internally with pins 1 and 2.
4 G input Gate of the P-channel MOSFET; VGS is rated +/-20 V maximum and threshold VGS(th) is -1 V min to -2 V max at ID = -250 uA.
5 D passive Drain of the P-channel MOSFET, tied internally with pins 6, 7 and 8; BVDSS is -30 V and continuous ID is -14 A at TA = 25 C.
6 D passive Drain of the P-channel MOSFET, tied internally with pins 5, 7 and 8; BVDSS is -30 V and continuous ID is -14 A at TA = 25 C.
7 D passive Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 8; BVDSS is -30 V and continuous ID is -14 A at TA = 25 C.
8 D passive Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 7; BVDSS is -30 V and continuous ID is -14 A at TA = 25 C.

Key specifications

Parameter Value
Manufacturer FOSAN
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS -30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current (continuous) ID -14 A at TA = 25°C 1
Drain Current (pulsed) IDM -70 A 1
Total Device Dissipation PTOT 3 W at TA = 25°C 1
Junction/Storage Temperature TJ,Tstg -55 150 ℃ 1
Thermal Resistance Junction-Ambient RΘJA 42 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V ID = -250uA, VGS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.3 -2 V ID = -250uA, VGS= VDS 2
Zero Gate Voltage Drain Current IDSS -1 uA VGS=0V, VDS= -24V 2
Gate Body Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Static Drain-Source On-State Resistance RDS(ON) 8.5 11 mΩ ID= -15A, VGS= -10V 2
Static Drain-Source On-State Resistance RDS(ON) 10 13 mΩ ID= -10A, VGS= -4.5V 2
Diode Forward Voltage Drop VSD -0.71 -1 V ISD= -1A, VGS=0V 2

CAD (KiCad official)

  • Symbol: FS4409
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: fs4409-etched.step / fs4409-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fs4409.step / fs4409.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FOSAN datasheet (5 pp, sha256 bea9d760c040fefc, retrieved 2026-10-17, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF