main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 13h ago
viewers fs10asj-06f-t13-vb: viewers · Ray 13h ago
fs10asj-06f-t13-vb-etched.glb Publish 0.1.0 · Ray 13h ago
fs10asj-06f-t13-vb-etched.step fs10asj-06f-t13-vb: factory component page (tier=lcsc) · Ray 13h ago
fs10asj-06f-t13-vb-hero.glb fs10asj-06f-t13-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 13h ago
fs10asj-06f-t13-vb-hero.overlay.json Publish 0.1.0 · Ray 13h ago
fs10asj-06f-t13-vb.glb Publish 0.1.0 · Ray 13h ago
fs10asj-06f-t13-vb.kicad_mod Publish 0.1.0 · Ray 13h ago
fs10asj-06f-t13-vb.kicad_sym Publish 0.1.0 · Ray 13h ago
fs10asj-06f-t13-vb.lbr Publish 0.1.0 · Ray 13h ago
fs10asj-06f-t13-vb.step Publish 0.1.0 · Ray 13h ago
package.json Publish 0.1.0 · Ray 13h ago
page.json Set visibility: public · Ray 13h ago
README.md Publish 0.1.0 · Ray 13h ago

FS10ASJ-06F-T13-VB

VBsemi Elec · MOSFETs · TO-252

FS10ASJ-06F-T13-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, rated for VGS of ±20 V maximum, with threshold VGS(th) of 1.0 to 3.0 V at ID = 250 µA.
2 D passive Drain terminal, connected internally to the tab, rated for VDS of 60 V maximum.
3 S passive Source terminal of the N-channel MOSFET, with continuous drain current up to 18 A as shown in the product summary.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Pulsed Drain Current IDM 25 A t = 300 µs 1
Avalanche Current IAS 15 A 1
Single Avalanche Energy EAS 11.25 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 41.7 W TC = 25 °C 1
Maximum Power Dissipation PD 2.1 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient (PCB Mount) RthJA 60 °C/W PCB mount, 1" square FR-4 1
Junction-to-Case (Drain) RthJC 3 °C/W 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -250 250 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 60 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) 20 A VDS ≥ 10 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.073 Ω VGS = 10 V, ID = 6.6 A 2
Drain-Source On-State Resistance RDS(on) 0.085 Ω VGS = 4.5 V, ID = 6 A 2
Total Gate Charge Qg 19.8 30 nC VDS = 30 V, VGS = 10 V, ID = 6.6 A 2
Gate Resistance Rg 0.4 2 4 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 8 16 ns VDD = 30 V, RL = 9.6 Ω, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 11 20 ns VDD = 30 V, RL = 9.6 Ω, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 18 27 ns VDD = 30 V, RL = 9.6 Ω, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 5 10 ns VDD = 30 V, RL = 9.6 Ω, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 38 57 ns VDD = 30 V, RL = 9.6 Ω, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 58 87 ns VDD = 30 V, RL = 9.6 Ω, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 8 16 ns VDD = 30 V, RL = 9.6 Ω, VGEN = 4.5 V, Rg = 1 Ω 2
Body Diode Continuous Current IS 18 A TC = 25 °C 2
Body Diode Pulsed Current ISM 25 A TC = 25 °C 2
Forward Voltage VSD 0.8 1.5 V IF = 5.2 A, VGS = 0 V 2
Reverse Recovery Time trr 34 51 ns IF = 5.2 A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 50 75 nC IF = 5.2 A, dI/dt = 100 A/µs 2
Forward Transconductance gfs 25 S VDS = 15 V, ID = 6.6 A 2
Output Capacitance Coss 85 pF VDS = 30 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 40 pF VDS = 30 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 3.6 nC VDS = 30 V, VGS = 10 V, ID = 6.6 A 2
Gate-Drain Charge Qgd 4.1 nC VDS = 30 V, VGS = 10 V, ID = 6.6 A 2

CAD (KiCad official)

  • Symbol: FS10ASJ-06F-T13-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: fs10asj-06f-t13-vb-etched.step / fs10asj-06f-t13-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fs10asj-06f-t13-vb.step / fs10asj-06f-t13-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 dd12cd73da190559, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF