component
FR2307Z-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FR2307Z-VB
VBsemi Elec · MOSFETs · TO-252
FR2307Z-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for a drain-source voltage of 100 V and connected to the mounting tab. |
| 3 | S | passive | Source of the N-channel MOSFET, which is the body diode anode side and the current return for the 100 V, 0.0185 ohm (at VGS = 10 V) channel. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Avalanche Energy | EAS | 101 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 136.4 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 68.2 | W | TC = 100 °C | 1 | ||
| Maximum Power Dissipation | PD | 3 | W | TA = 25 °C, surface mounted on 1" x 1" FR4 | 1 | ||
| Maximum Power Dissipation | PD | 1.5 | W | TA = 100 °C, surface mounted on 1" x 1" FR4 | 1 | ||
| Continuous Drain Current | ID | 9.2 | A | TA = 25 °C, TJ = 150 °C, surface mounted on 1" x 1" FR4 | 1 | ||
| Continuous Drain Current | ID | 6.8 | A | TA = 100 °C, TJ = 150 °C, surface mounted on 1" x 1" FR4 | 1 | ||
| Continuous Source-Drain Diode Current | IS | 2 | A | TA = 25 °C, surface mounted on 1" x 1" FR4 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 40 | 50 | °C/W | Steady state, surface mounted on 1" x 1" FR4 | 1 | |
| Junction-to-Case Thermal Resistance | RthJC | 0.85 | 1.1 | °C/W | 1 | ||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 5 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | 2 | ||
| Gate Resistance | Rg | 1.6 | 2.5 | Ω | f = 1 MHz | 2 | |
| Turn-On Delay Time | td(on) | 12 | 20 | ns | VDD = 50 V, RL = 1 Ω, ID ≈ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 10 | 20 | ns | VDD = 50 V, RL = 1 Ω, ID ≈ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 18 | 35 | ns | VDD = 50 V, RL = 1 Ω, ID ≈ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 8 | 15 | ns | VDD = 50 V, RL = 1 Ω, ID ≈ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulse Diode Forward Current | ISM | 100 | A | 2 | |||
| Body Diode Voltage | VSD | 0.85 | 1.5 | V | IS = 15 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 80 | 120 | ns | IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 160 | 240 | nC | IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.0185 | Ω | VGS = 10 V, ID = 15 A | 2 | ||
| Forward Transconductance | gfs | 33 | S | VDS = 15 V, ID = 15 A | 2 | ||
| Input Capacitance | Ciss | 2400 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 230 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 80 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Total Gate Charge | Qg | 38 | nC | VDS = 50 V, VGS = 10 V, ID = 50 A | 2 | ||
| Gate-Source Charge | Qgs | 14 | nC | VDS = 50 V, VGS = 10 V, ID = 50 A | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -12.5 | mV/°C | ID = 250 µA | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 110 | mV/°C | ID = 250 µA | 2 |
CAD (KiCad official)
- Symbol:
FR2307Z-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fr2307z-vb-etched.step/fr2307z-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fr2307z-vb.step/fr2307z-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
2699b88774ae419c, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FR2307Z-VB
**VBsemi Elec** · MOSFETs · TO-252
FR2307Z-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for a drain-source voltage of 100 V and connected to the mounting tab. |
| 3 | S | passive | Source of the N-channel MOSFET, which is the body diode anode side and the current return for the 100 V, 0.0185 ohm (at VGS = 10 V) channel. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA = 25 °C | 1 |
| Avalanche Energy | EAS | | | 101 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 136.4 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 68.2 | W | TC = 100 °C | 1 |
| Maximum Power Dissipation | PD | | | 3 | W | TA = 25 °C, surface mounted on 1" x 1" FR4 | 1 |
| Maximum Power Dissipation | PD | | | 1.5 | W | TA = 100 °C, surface mounted on 1" x 1" FR4 | 1 |
| Continuous Drain Current | ID | | | 9.2 | A | TA = 25 °C, TJ = 150 °C, surface mounted on 1" x 1" FR4 | 1 |
| Continuous Drain Current | ID | | | 6.8 | A | TA = 100 °C, TJ = 150 °C, surface mounted on 1" x 1" FR4 | 1 |
| Continuous Source-Drain Diode Current | IS | | | 2 | A | TA = 25 °C, surface mounted on 1" x 1" FR4 | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | 40 | 50 | °C/W | Steady state, surface mounted on 1" x 1" FR4 | 1 |
| Junction-to-Case Thermal Resistance | RthJC | | 0.85 | 1.1 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | 100 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | | 5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 100 V, VGS = 0 V | 2 |
| Gate Resistance | Rg | | 1.6 | 2.5 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 12 | 20 | ns | VDD = 50 V, RL = 1 Ω, ID ≈ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 10 | 20 | ns | VDD = 50 V, RL = 1 Ω, ID ≈ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 18 | 35 | ns | VDD = 50 V, RL = 1 Ω, ID ≈ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 8 | 15 | ns | VDD = 50 V, RL = 1 Ω, ID ≈ 50 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Pulse Diode Forward Current | ISM | | | 100 | A | | 2 |
| Body Diode Voltage | VSD | | 0.85 | 1.5 | V | IS = 15 A | 2 |
| Body Diode Reverse Recovery Time | trr | | 80 | 120 | ns | IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 160 | 240 | nC | IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.0185 | | Ω | VGS = 10 V, ID = 15 A | 2 |
| Forward Transconductance | gfs | | 33 | | S | VDS = 15 V, ID = 15 A | 2 |
| Input Capacitance | Ciss | | 2400 | | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 230 | | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 80 | | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 38 | | nC | VDS = 50 V, VGS = 10 V, ID = 50 A | 2 |
| Gate-Source Charge | Qgs | | 14 | | nC | VDS = 50 V, VGS = 10 V, ID = 50 A | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | | -12.5 | | mV/°C | ID = 250 µA | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ | | 110 | | mV/°C | ID = 250 µA | 2 |
## CAD (KiCad official)
- Symbol: `FR2307Z-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fr2307z-vb-etched.step` / `fr2307z-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fr2307z-vb.step` / `fr2307z-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/fr2307z-vb-datasheet.pdf) (8 pp, sha256 `2699b88774ae419c`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fr2307z-vb-datasheet.pdf)