component
FQPF8N80C-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FQPF8N80C-VB
VBsemi Elec · MOSFETs · TO-220F
FQPF8N80C-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±30 V and the gate-source threshold is 2.0 V to 4.0 V. |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 800 V and continuous drain current is 5 A at TC = 25 °C. |
| 3 | S | passive | Source terminal; continuous source-drain diode current is rated 5.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 800 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 5 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 3.9 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 21 | A | 1 | |||
| Linear Derating Factor | 1.5 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 770 | mJ | 1 | |||
| Repetitive Avalanche Current | IAR | 7.8 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 19 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 190 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 2 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s | 1 | |||
| Mounting Torque | 10 | lbf·in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N·m | 6-32 or M3 screw | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 40 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 0.65 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 800 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS = 800 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 500 | μA | VDS = 640 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 5.6 | S | VDS = 100 V, ID = 3.7 A | 2 | ||
| Total Gate Charge | Qg | 200 | nC | VGS = 10 V, ID = 3.8 A, VDS = 400 V | 2 | ||
| Gate-Drain Charge | Qgd | 110 | nC | VGS = 10 V, ID = 3.8 A, VDS = 400 V | 2 | ||
| Continuous Source-Drain Diode Current | IS | 5 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 21 | A | 2 | |||
| Body Diode Voltage | VSD | 1.8 | V | TJ = 25 °C, IS = 3.8 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 50 | 980 | ns | TJ = 25 °C, IF = 3.8 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 3.8 | 5.7 | μC | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 0.98 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 1.2 | Ω | VGS = 10 V, ID = 3.7 A | 2 | ||
| Input Capacitance | Ciss | 3100 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 800 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 490 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Gate-Source Charge | Qgs | 24 | nC | VGS = 10 V, ID = 3.8 A, VDS = 400 V | 2 | ||
| Turn-On Delay Time | td(on) | 19 | ns | VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD = 52 Ω | 2 | ||
| Rise Time | tr | 38 | ns | VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD = 52 Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 120 | ns | VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD = 52 Ω | 2 | ||
| Fall Time | tf | 39 | ns | VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD = 52 Ω | 2 | ||
| Internal Drain Inductance | LD | 5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 | ||
| Internal Source Inductance | LS | 13 | nH | 2 | |||
| Case-to-Sink, Flat, Greased Surface | RthCS | 0.24 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
FQPF8N80C-VB - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
2d3a7833d8e9204d, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FQPF8N80C-VB
**VBsemi Elec** · MOSFETs · TO-220F
FQPF8N80C-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±30 V and the gate-source threshold is 2.0 V to 4.0 V. |
| 2 | D | passive | Drain terminal; drain-source voltage is rated 800 V and continuous drain current is 5 A at TC = 25 °C. |
| 3 | S | passive | Source terminal; continuous source-drain diode current is rated 5.0 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 800 | V | | 1 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 5 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 3.9 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 21 | A | | 1 |
| Linear Derating Factor | | | | 1.5 | W/°C | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 770 | mJ | | 1 |
| Repetitive Avalanche Current | IAR | | | 7.8 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 19 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 190 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt | | | 2 | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering Recommendations (Peak Temperature) | | | | 300 | °C | for 10 s | 1 |
| Mounting Torque | | | | 10 | lbf·in | 6-32 or M3 screw | 1 |
| Mounting Torque | | | | 1.1 | N·m | 6-32 or M3 screw | 1 |
| Maximum Junction-to-Ambient | RthJA | | | 40 | °C/W | | 2 |
| Maximum Junction-to-Case (Drain) | RthJC | | | 0.65 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | VDS | 800 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | μA | VDS = 800 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 500 | μA | VDS = 640 V, VGS = 0 V, TJ = 125 °C | 2 |
| Forward Transconductance | gfs | 5.6 | | | S | VDS = 100 V, ID = 3.7 A | 2 |
| Total Gate Charge | Qg | | | 200 | nC | VGS = 10 V, ID = 3.8 A, VDS = 400 V | 2 |
| Gate-Drain Charge | Qgd | | | 110 | nC | VGS = 10 V, ID = 3.8 A, VDS = 400 V | 2 |
| Continuous Source-Drain Diode Current | IS | | | 5 | A | | 2 |
| Pulsed Diode Forward Current | ISM | | | 21 | A | | 2 |
| Body Diode Voltage | VSD | | | 1.8 | V | TJ = 25 °C, IS = 3.8 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 50 | 980 | ns | TJ = 25 °C, IF = 3.8 A, dI/dt = 100 A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 3.8 | 5.7 | μC | | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ | | 0.98 | | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 1.2 | | Ω | VGS = 10 V, ID = 3.7 A | 2 |
| Input Capacitance | Ciss | | 3100 | | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss | | 800 | | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 490 | | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Gate-Source Charge | Qgs | | 24 | | nC | VGS = 10 V, ID = 3.8 A, VDS = 400 V | 2 |
| Turn-On Delay Time | td(on) | | 19 | | ns | VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD = 52 Ω | 2 |
| Rise Time | tr | | 38 | | ns | VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD = 52 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 120 | | ns | VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD = 52 Ω | 2 |
| Fall Time | tf | | 39 | | ns | VDD = 400 V, ID = 3.8 A, Rg = 6.2 Ω, RD = 52 Ω | 2 |
| Internal Drain Inductance | LD | | 5 | | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
| Internal Source Inductance | LS | | 13 | | nH | | 2 |
| Case-to-Sink, Flat, Greased Surface | RthCS | | 0.24 | | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `FQPF8N80C-VB`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/fqpf8n80c-vb-datasheet.pdf) (9 pp, sha256 `2d3a7833d8e9204d`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fqpf8n80c-vb-datasheet.pdf)