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FQPF6N80C

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onsemi MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FQPF6N80C

onsemi · MOSFETs · TO-220F-3

FQPF6N80C from onsemi, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET; the gate-source voltage is rated at ±30 V (VGSS).
2 D passive Drain of the MOSFET; the continuous drain current is 5.5 A at TC = 25°C, limited by maximum junction temperature, and the drain-source voltage is rated at 800 V (VDSS).
3 S passive Source of the MOSFET; the body diode forward current is rated at 5.5 A continuous and 22 A pulsed (ISM).

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220F-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 800 V 1
Drain Current - Continuous ID 5.5 A TC = 25°C 1
Drain Current - Continuous ID 3.2 A TC = 100°C 1
Drain Current - Pulsed IDM 22 A Note 1 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulsed Avalanche Energy EAS 680 mJ Note 2 1
Avalanche Current IAR 5.5 A Note 1 1
Repetitive Avalanche Energy EAR 15.8 mJ Note 1 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3 1
Power Dissipation PD 51 W TC = 25°C 1
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum lead temperature for soldering purposes TL 300 °C 1/8" from case for 5 seconds 1
Drain-Source Breakdown Voltage BVDSS 800 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 800 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 100 µA VDS = 640 V, TC = 125°C 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250 µA 2
Static Drain-Source On-Resistance RDS(on) 2.1 2.5 Ω VGS = 10 V, ID = 2.75 A 2
Input Capacitance Ciss 1010 1310 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 90 115 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 8 11 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Turn-On Delay Time td(on) 26 60 ns VDD = 400 V, ID = 5.5 A, RG = 25 Ω 2
Turn-On Rise Time tr 65 140 ns VDD = 400 V, ID = 5.5 A, RG = 25 Ω 2
Turn-Off Delay Time td(off) 47 105 ns VDD = 400 V, ID = 5.5 A, RG = 25 Ω 2
Turn-Off Fall Time tf 44 90 ns VDD = 400 V, ID = 5.5 A, RG = 25 Ω 2
Total Gate Charge Qg 21 30 nC VDS = 640 V, ID = 5.5 A, VGS = 10 V 2
Maximum Continuous Drain-Source Diode Forward Current IS 5.5 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 22 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 5.5 A 2
Thermal Resistance, Junction-to-Case RθJC 2.45 °C/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W 1
Power Dissipation derating above 25°C 0.41 W/°C Derate above 25°C 1

CAD (KiCad official)

  • Symbol: FQPF6N80C
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 0cd37d782fa29a68, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF