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FQPF3N80C

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onsemi MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FQPF3N80C

onsemi · MOSFETs · TO-220F-3

FQPF3N80C from onsemi, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MOSFET, rated for a gate-source voltage VGSS of ±30 V.
2 D passive Drain of the MOSFET, rated for a continuous drain current ID of 3 A at TC = 25°C on the FQPF3N80C (TO-220F) column.
3 S passive Source of the MOSFET, the reference terminal for the drain-source breakdown voltage BVDSS of 800 V minimum.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220F-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 800 V 1
Drain Current - Continuous ID 3 A TC = 25°C 1
Drain Current - Continuous ID 1.9 A TC = 100°C 1
Drain Current - Pulsed IDM 12 A Note 1 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulsed Avalanche Energy EAS 320 mJ Note 2 1
Avalanche Current IAR 3 A Note 1 1
Repetitive Avalanche Energy EAR 10.7 mJ Note 1 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3 1
Power Dissipation PD 39 W TC = 25°C 1
Derate above 25°C 0.31 W/°C 1
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum lead temperature for soldering purposes TL 300 °C 1/8" from case for 5 seconds 1
Thermal Resistance, Junction-to-Case RθJC 3.2 °C/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62.5 °C/W 1
Drain-Source Breakdown Voltage BVDSS 800 V VGS = 0 V, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 800 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 100 µA VDS = 640 V, TC = 125°C 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250 µA 2
Static Drain-Source On-Resistance RDS(on) 4 4.8 Ω VGS = 10 V, ID = 1.5 A 2
Input Capacitance Ciss 543 705 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 54 70 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 5.5 7.5 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Turn-On Delay Time td(on) 15 40 ns VDD = 400 V, ID = 3 A, RG = 25 Ω 2
Turn-On Rise Time tr 43.5 95 ns VDD = 400 V, ID = 3 A, RG = 25 Ω 2
Turn-Off Delay Time td(off) 22.5 55 ns VDD = 400 V, ID = 3 A, RG = 25 Ω 2
Turn-Off Fall Time tf 32 75 ns VDD = 400 V, ID = 3 A, RG = 25 Ω 2
Total Gate Charge Qg 13 16.5 nC VDS = 640 V, ID = 3 A, VGS = 10 V 2
Maximum Continuous Drain-Source Diode Forward Current IS 3 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 12 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 3.0 A 2

CAD (KiCad official)

  • Symbol: FQPF3N80C
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 e32db1a2bd4cda0e, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF