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FQP85N06-VB

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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FQP85N06-VB

VBsemi Elec · MOSFETs · TO-220AB

FQP85N06-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, rated for a gate-source voltage of ±20 V with a threshold of 1 V min to 3 V max at 250 µA.
2 D passive Drain of the N-channel MOSFET, with a 60 V minimum drain-source breakdown voltage and 60 A continuous drain current at TC = 25 °C.
3 S passive Source of the N-channel MOSFET, with a continuous source (diode conduction) current of 50 A, package limited.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 60 A TJ = 175 °C, TC = 25 °C 1
Continuous Drain Current ID 50 A TJ = 175 °C, TC = 100 °C 1
Pulsed Drain Current IDM 200 A 1
Continuous Source Current (Diode Conduction) IS 50 A package limited 1
Avalanche Current IAS 50 A 1
Single Avalanche Energy EAS 125 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 136 W TC = 25 °C 1
Maximum Power Dissipation PD 3 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 15 18 °C/W t ≤ 10 sec 1
Junction-to-Ambient Thermal Resistance RthJA 40 50 °C/W Steady State 1
Junction-to-Case Thermal Resistance RthJC 0.85 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 60 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 60 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.011 Ω VGS = 10 V, ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 0.014 Ω VGS = 10 V, ID = 20 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.018 Ω VGS = 10 V, ID = 20 A, TJ = 175 °C 2
Drain-Source On-State Resistance RDS(on) 0.013 Ω VGS = 4.5 V, ID = 15 A 2
Diode Forward Voltage VSD 1 1.5 V IF = 20 A, VGS = 0 V 2
Reverse Recovery Time trr 45 100 ns IF = 20 A, di/dt = 100 A/µs 2
Pulsed Source Current ISM 60 A TC = 25 °C 2
Forward Transconductance gfs 60 S VDS = 15 V, ID = 20 A 2

CAD (KiCad official)

  • Symbol: FQP85N06-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: fqp85n06-vb-etched.step / fqp85n06-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqp85n06-vb.step / fqp85n06-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 183c2082f04739c0, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF