component
FQP50N06-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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FQP50N06-VB
VBsemi Elec · MOSFETs · TO-220AB
FQP50N06-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet limits the gate-source voltage to ±20 V (VGS). |
| 2 | D | passive | Drain terminal; the datasheet rates continuous drain current at 60 A (TC = 25 °C) and pulsed drain current at 200 A (IDM). |
| 3 | S | passive | Source terminal; the datasheet rates continuous source current (diode conduction) at 50 A (IS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Static Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60 V, VGS = 0 | 2 | ||
| Zero Gate Voltage Drain Current at TJ = 125 °C | IDSS | 50 | µA | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current at TJ = 175 °C | IDSS | 250 | µA | VDS = 60 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 60 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.011 | Ω | VGS = 10 V, ID = 20 A | 2 | ||
| Drain-Source On-State Resistance at TJ = 125 °C | RDS(on) | 0.014 | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance at TJ = 175 °C | RDS(on) | 0.018 | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.013 | Ω | VGS = 4.5 V, ID = 15 A | 2 | ||
| Forward Transconductance | gfs | 60 | S | VDS = 15 V, ID = 20 A | 2 | ||
| Input Capacitance | Ciss | 420 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 570 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 325 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Pulsed Current | ISM | 60 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | 1.5 | V | IF = 20 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 45 | 100 | ns | IF = 20 A, di/dt = 100 A/µs | 2 | |
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 60 | A | TC = 25 °C (TJ = 175 °C) | 1 | ||
| Continuous Drain Current | ID | 50 | A | TC = 100 °C (TJ = 175 °C) | 1 | ||
| Pulsed Drain Current | IDM | 200 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 50 | A | 1 | |||
| Avalanche Current | IAS | 50 | A | 1 | |||
| Single Avalanche Energy | EAS | 125 | mJ | L = 0.1 mH, duty cycle ≤ 1 % | 1 | ||
| Maximum Power Dissipation | PD | 136 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient, t ≤ 10 s | RthJA | 15 | 18 | °C/W | t ≤ 10 sec | 1 | |
| Maximum Junction-to-Ambient, steady state | RthJA | 40 | 50 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Case | RthJC | 0.85 | 1.1 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
FQP50N06-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
fqp50n06-vb-etched.step/fqp50n06-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fqp50n06-vb.step/fqp50n06-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
db55ad497eaefb03, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).