component
FQP27P06
Public Made by Adomby adom
UMW MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FQP27P06
UMW · MOSFETs · TO-220
FQP27P06 from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE pin of the TO-220 package, per the pinning table on page 1 (datasheet gives no voltage or current limit for this pin). |
| 2 | D | passive | Pin labelled D in the pinning table; the printed description column reads SOURCE, which conflicts with the symbol and should be verified against the package drawing. |
| 3 | S | passive | Pin labelled S in the pinning table; the printed description column reads DRAIN, which conflicts with the symbol and should be verified against the package drawing. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | -60 | V | ID=-250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-60V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (TC=150°C) | IDSS | -10 | µA | VDS=-48V, TC=150°C | 3 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS=25V, VDS=0V | 3 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS=-25V, VDS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | -2 | -4 | V | VDS=VGS, ID=-250µA | 3 | |
| Static Drain to Source On Resistance | RDS(ON) | 55 | 70 | mΩ | VGS=-10V, ID=-13.5A (Note 4) | 3 | |
| Input Capacitance | Ciss | 1100 | 1400 | pF | VDS=-25V, VGS=0V, f=1MHz | 3 | |
| Output Capacitance | Coss | 510 | 660 | pF | VDS=-25V, VGS=0V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 120 | 155 | pF | VDS=-25V, VGS=0V, f=1MHz | 3 | |
| Turn-On Delay Time | tD(on) | 18 | 45 | ns | VDD=-30V, ID=-13.5A, RG=25Ω (Note 4) | 3 | |
| Rise Time | tr | 185 | 380 | ns | VDD=-30V, ID=-13.5A, RG=25Ω (Note 4) | 3 | |
| Turn-Off Delay Time | tD(off) | 30 | 70 | ns | VDD=-30V, ID=-13.5A, RG=25Ω (Note 4) | 3 | |
| Fall Time | tf | 90 | 190 | ns | VDD=-30V, ID=-13.5A, RG=25Ω (Note 4) | 3 | |
| Total Gate Charge | Qg | 33 | 43 | nC | VDS=-48V, ID=-27A, VGS=-10V (Note 4) | 3 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -27 | A | 3 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -108 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | -4 | V | VGS=0V, IS=-27A | 4 | ||
| Drain Current - Continuous (TC=25°C) | ID | -27 | A | TC=25°C | 1 | ||
| Drain Current - Continuous (TC=100°C) | ID | -19.1 | A | TC=100°C | 1 | ||
| Drain Current - Pulsed | IDM | -108 | A | 1 | |||
| Drain Source Voltage | VDSS | -60 | V | 1 | |||
| Gate-Source Voltage | VGSS | -25 | 25 | V | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 560 | mJ | 1 | |||
| Avalanche Current | IAR | -27 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 12 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | -7 | V/ns | 1 | |||
| Power Dissipation | PD | 120 | W | TC=25°C | 1 | ||
| Power Dissipation - Derate above 25°C | PD | 0.8 | W/°C | Derate above 25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case, Max. | RθJC | 1.25 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient, Max. | RθJA | 62.5 | °C/W | 2 | |||
| Thermal Resistance, Case-to-Sink, Typ. | RθCS | 0.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
FQP27P06 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
fqp27p06-etched.step/fqp27p06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fqp27p06.step/fqp27p06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (12 pp, sha256
4727b6915ede729e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FQP27P06
**UMW** · MOSFETs · TO-220
FQP27P06 from UMW, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE pin of the TO-220 package, per the pinning table on page 1 (datasheet gives no voltage or current limit for this pin). |
| 2 | D | passive | Pin labelled D in the pinning table; the printed description column reads SOURCE, which conflicts with the symbol and should be verified against the package drawing. |
| 3 | S | passive | Pin labelled S in the pinning table; the printed description column reads DRAIN, which conflicts with the symbol and should be verified against the package drawing. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | -60 | | | V | ID=-250µA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS=-60V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current (TC=150°C) | IDSS | | | -10 | µA | VDS=-48V, TC=150°C | 3 |
| Gate-Body Leakage Current, Forward | IGSSF | | | 100 | nA | VGS=25V, VDS=0V | 3 |
| Gate-Body Leakage Current, Reverse | IGSSR | | | -100 | nA | VGS=-25V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | -2 | | -4 | V | VDS=VGS, ID=-250µA | 3 |
| Static Drain to Source On Resistance | RDS(ON) | | 55 | 70 | mΩ | VGS=-10V, ID=-13.5A (Note 4) | 3 |
| Input Capacitance | Ciss | | 1100 | 1400 | pF | VDS=-25V, VGS=0V, f=1MHz | 3 |
| Output Capacitance | Coss | | 510 | 660 | pF | VDS=-25V, VGS=0V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 120 | 155 | pF | VDS=-25V, VGS=0V, f=1MHz | 3 |
| Turn-On Delay Time | tD(on) | | 18 | 45 | ns | VDD=-30V, ID=-13.5A, RG=25Ω (Note 4) | 3 |
| Rise Time | tr | | 185 | 380 | ns | VDD=-30V, ID=-13.5A, RG=25Ω (Note 4) | 3 |
| Turn-Off Delay Time | tD(off) | | 30 | 70 | ns | VDD=-30V, ID=-13.5A, RG=25Ω (Note 4) | 3 |
| Fall Time | tf | | 90 | 190 | ns | VDD=-30V, ID=-13.5A, RG=25Ω (Note 4) | 3 |
| Total Gate Charge | Qg | | 33 | 43 | nC | VDS=-48V, ID=-27A, VGS=-10V (Note 4) | 3 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | -27 | A | | 3 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | -108 | A | | 3 |
| Drain-Source Diode Forward Voltage | VSD | | | -4 | V | VGS=0V, IS=-27A | 4 |
| Drain Current - Continuous (TC=25°C) | ID | | | -27 | A | TC=25°C | 1 |
| Drain Current - Continuous (TC=100°C) | ID | | | -19.1 | A | TC=100°C | 1 |
| Drain Current - Pulsed | IDM | | | -108 | A | | 1 |
| Drain Source Voltage | VDSS | | | -60 | V | | 1 |
| Gate-Source Voltage | VGSS | -25 | | 25 | V | | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 560 | mJ | | 1 |
| Avalanche Current | IAR | | | -27 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 12 | mJ | | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | -7 | V/ns | | 1 |
| Power Dissipation | PD | | | 120 | W | TC=25°C | 1 |
| Power Dissipation - Derate above 25°C | PD | | | 0.8 | W/°C | Derate above 25°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Maximum Lead Temperature for Soldering Purposes | TL | | | 300 | °C | 1/8" from case for 5 seconds | 1 |
| Thermal Resistance, Junction-to-Case, Max. | RθJC | | | 1.25 | °C/W | | 2 |
| Thermal Resistance, Junction-to-Ambient, Max. | RθJA | | | 62.5 | °C/W | | 2 |
| Thermal Resistance, Case-to-Sink, Typ. | RθCS | | 0.5 | | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `FQP27P06`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `fqp27p06-etched.step` / `fqp27p06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fqp27p06.step` / `fqp27p06.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8763509900859187200) (12 pp, sha256 `4727b6915ede729e`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fqp27p06-datasheet.pdf)