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FQP27P06-VB

VBsemi Elec · MOSFETs · TO-220AB

FQP27P06-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET, with gate-source voltage rated at ±20 V.
2 D passive Drain terminal, rated for a drain-source voltage of -60 V and a continuous drain current of -45 A at TC = 25 °C.
3 S passive Source terminal, with a body-diode continuous current rating of -40 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V Absolute maximum rating, TC = 25 °C unless noted 1
Gate-Source Voltage VGS -20 20 V Absolute maximum rating 1
Continuous Drain Current (TJ = 150 °C) ID -45 A TC = 25 °C 1
Continuous Drain Current (TJ = 150 °C) ID -39 A TC = 70 °C 1
Pulsed Drain Current IDM -100 A t = 300 µs 1
Avalanche Current IAS -32 A 1
Single Avalanche Energy EAS 51 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 41.7 W TC = 25 °C 1
Maximum Power Dissipation PD 2.1 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient (PCB Mount) RthJA 60 °C/W PCB mount, 1 in square FR-4 pad 1
Junction-to-Case (Drain) RthJC 3 °C/W Junction-to-case (drain) 1
Drain-Source Breakdown Voltage VDS -60 V VDS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage IGSS -250 250 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 60 V, VGS = 0 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = - 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -250 µA VDS = - 60 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) -30 A VDS - 10 V, VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.048 Ω VGS = - 10 V, ID = - 14 A 2
Drain-Source On-State Resistance RDS(on) 0.056 Ω VGS = - 4.5 V, ID = - 12 A 2
Total Gate Charge Qg 67 100 nC VDS = - 30 V, VGS = - 10 V, ID = - 14 A 2
Gate Resistance Rg 0.5 2.5 5 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 10 20 ns VDD = - 30 V, RL = 2, ID - 10 A, VGEN = - 10 V, Rg = 1 2
Rise Time tr 11 20 ns VDD = - 30 V, RL = 2, ID - 10 A, VGEN = - 10 V, Rg = 1 2
Turn-Off Delay Time td(off) 42 63 ns VDD = - 30 V, RL = 2, ID - 10 A, VGEN = - 10 V, Rg = 1 2
Fall Time tf 12 20 ns VDD = - 30 V, RL = 2, ID - 10 A, VGEN = - 10 V, Rg = 1 2
Continuous Current (body diode) IS -40 A TC = 25 °C 2
Pulsed Current (body diode) ISM -100 A 2
Forward Voltage VSD -0.8 -1.5 V IF = - 10 A, VGS = 0 V 2
Reverse Recovery Time trr 3 8 57 ns IF = - 10 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 2.3 3.5 A IF = - 10 A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 40 60 nC IF = - 10 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: FQP27P06-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: fqp27p06-vb-etched.step / fqp27p06-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqp27p06-vb.step / fqp27p06-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 da7a0104d6a8b2c8, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF