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FQP13N10L-VB

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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FQP13N10L-VB

VBsemi Elec · MOSFETs · TO-220AB

FQP13N10L-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with rDS(on) specified at VGS = 10 V.
2 D passive Drain (also the case/tab connection per the Junction-to-Case (Drain) rating); VDS up to 100 V and continuous ID of 18 A at TC = 25 °C.
3 S passive Source; continuous body-diode current IS of 18 A and pulsed ISM of 68 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VDS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TJ=125 °C) IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current (TJ=175 °C) IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 120 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance rDS(on) 0.127 Ω VGS = 10 V, ID = 20 A 2
Drain-Source On-State Resistance (TJ=125 °C) rDS(on) 0.13 Ω VGS = 10 V, ID = 20 A, TJ = 125 °C 2
Drain-Source On-State Resistance (TJ=175 °C) rDS(on) 0.17 Ω VGS = 10 V, ID = 20 A, TJ = 175 °C 2
Gate Resistance Rg 0.5 1.7 3.3 Ω 2
Source-Drain Continuous Current IS 18 A TC = 25 °C 2
Source-Drain Pulsed Current ISM 68 A TC = 25 °C 2
Forward Voltage VSD 1 1.5 V IF = 65 A, VGS = 0 V 2
Reverse Recovery Time trr 130 200 ns IF = 50 A, di/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 8 12 A IF = 50 A, di/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 0.52 1.2 µC IF = 50 A, di/dt = 100 A/µs 2
Drain-Source Voltage VDS 100 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current (TC=25 °C) ID 18 A TJ = 175 °C, TC = 25 °C 1
Continuous Drain Current (TC=125 °C) ID 15 A TJ = 175 °C, TC = 125 °C 1
Pulsed Drain Current IDM 68 A TC = 25 °C 1
Avalanche Current IAS 18 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 200 mJ L = 0.1 mH 1
Maximum Power Dissipation (TA=25 °C) PD 3.75 W TA = 25 °C, 1" square PCB 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 40 °C/W PCB Mount (TO-263), 1" square PCB 1
Junction-to-Case (Drain) Thermal Resistance RthJC 0.4 °C/W 1

CAD (KiCad official)

  • Symbol: FQP13N10L-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: fqp13n10l-vb-etched.step / fqp13n10l-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqp13n10l-vb.step / fqp13n10l-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 67eac4d915b902e0, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF