FQD9N25TM_F085-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate-Source Voltage VGS is rated ±20 V, and Gate Input Resistance Rg is 0.3 to 1.2 Ω (f = 1 MHz).
2	D	passive	Drain-Source Breakdown Voltage VDS is 250 V minimum at VGS = 0 V and ID = 250 μA, with continuous drain current ID of 17 A at TC = 25 °C.
3	S	passive	Continuous Source-Drain Diode Current IS is 14 A, and Body Diode Voltage VSD is at most 1.8 V at IS = 14 A and VGS = 0 V.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			250	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID			17	A	TC = 25 °C, VGS at 10 V	1
Continuous Drain Current	ID			11	A	TC = 100 °C, VGS at 10 V	1
Pulsed Drain Current	IDM			56	A		1
Single Pulse Avalanche Energy	EAS			550	mJ		1
Repetitive Avalanche Current	IAR			17	A		1
Repetitive Avalanche Energy	EAR			13	mJ		1
Maximum Power Dissipation	PD			125	W	TC = 25 °C	1
Linear Derating Factor				1	W/°C		1
Peak Diode Recovery dV/dt	dV/dt			4.8	V/ns		1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Soldering Recommendations (Peak temperature)				300	°C	for 10 s, 1.6 mm from case	1
Maximum Junction-to-Ambient	RthJA			62	°C/W		2
Case-to-Sink, Flat, Greased Surface	RthCS		0.5		°C/W		2
Maximum Junction-to-Case (Drain)	RthJC			1	°C/W		2
Drain-Source Breakdown Voltage	VDS	250			V	VGS = 0 V, ID = 250 μA	2
VDS Temperature Coefficient	VDS/TJ		0.34		V/°C	Reference to 25 °C, ID = 1 mA	2
Gate-Source Threshold Voltage	VGS(th)	2		4	V	VDS = VGS, ID = 250 μA	2
Gate-Source Leakage	IGSS	-100		100	nA	VGS = ± 20 V	2
Zero Gate Voltage Drain Current	IDSS			25	μA	VDS = 250 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			250	μA	VDS = 200 V, VGS = 0 V, TJ = 125 °C	2
Drain-Source On-State Resistance	RDS(on)		0.176		Ω	VGS = 10 V, ID = 8.4 A	2
Forward Transconductance	gfs	6.7			S	VDS = 50 V, ID = 8.4 A	2
Total Gate Charge	Qg			68	nC	ID = 7.9 A, VDS = 200 V, VGS = 10 V, see fig. 6 and 13	2
Gate-Source Charge	Qgs			11	nC		2
Gate-Drain Charge	Qgd			35	nC		2
Gate Input Resistance	Rg	0.3		1.2	Ω	f = 1 MHz, open drain	2
Continuous Source-Drain Diode Current	IS			14	A		2
Pulsed Diode Forward Current	ISM			56	A		2
Body Diode Voltage	VSD			1.8	V	TJ = 25 °C, IS = 14 A, VGS = 0 V	2
Body Diode Reverse Recovery Time	trr			500	ns	TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μs	2
Body Diode Reverse Recovery Charge	Qrr		2.3	4.6	μC	TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μs	2

CAD (KiCad official)

Symbol: FQD9N25TM_F085-VB
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: fqd9n25tm-f085-vb-etched.step / fqd9n25tm-f085-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqd9n25tm-f085-vb.step / fqd9n25tm-f085-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (7 pp, sha256 29ec6eef4ae2cf34, retrieved 2026-11-02, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

FQD9N25TM_F085-VB

Verified FQD9N25TM_F085-VB

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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