component

FQD8P10TM

Public Made by Adom

by adom

onsemi MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsfqd8p10tmfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs fqd8p10tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
viewers fqd8p10tm: viewers · Ray 26d ago
fqd8p10tm-etched.glb fqd8p10tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
fqd8p10tm-etched.step fqd8p10tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
fqd8p10tm-hero.glb fqd8p10tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
fqd8p10tm-hero.overlay.json fqd8p10tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
fqd8p10tm.glb Publish 0.1.0 · Ray 26d ago
fqd8p10tm.kicad_mod Publish 0.1.0 · Ray 26d ago
fqd8p10tm.kicad_sym Publish 0.1.0 · Ray 26d ago
fqd8p10tm.lbr Publish 0.1.0 · Ray 26d ago
fqd8p10tm.step Publish 0.1.0 · Ray 26d ago
package.json fqd8p10tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
page.json fqd8p10tm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 23d ago
README.md fqd8p10tm: specified limits as data (metadata.characteristics, 35 rows from the datasheet) · Ray 25d ago

FQD8P10TM

onsemi · MOSFETs · DPAK

FQD8P10TM from onsemi, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel QFET; gate-source voltage is rated at VGSS 30 V in the absolute maximum ratings.
2 D passive Drain of the device; rated for VDSS -100 V and continuous drain current ID -6.6 A at TC = 25°C.
3 S passive Source of the device; the reference terminal for the gate-source voltage and the body diode.

Key specifications

Parameter Value
Manufacturer onsemi
Package DPAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -100 V 2
Drain Current - Continuous ID -6.6 A TC = 25°C 2
Drain Current - Continuous ID -4.2 A TC = 100°C 2
Drain Current - Pulsed IDM -26.4 A (Note 1) 2
Gate-Source Voltage VGSS 30 V 2
Single Pulsed Avalanche Energy EAS 150 mJ (Note 2) 2
Avalanche Current IAR -6.6 A (Note 1) 2
Repetitive Avalanche Energy EAR 4.4 mJ (Note 1) 2
Peak Diode Recovery dv/dt dv/dt -6 V/ns (Note 3) 2
Power Dissipation PD 2.5 W TA = 25°C 2
Power Dissipation PD 44 W TC = 25°C 2
Power Dissipation Derating PD 0.35 W/°C Derate above 25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Maximum Lead Temperature for Soldering Purposes TL 300 °C 1/8" from case for 5 seconds 2
Thermal Resistance, Junction to Case RθJC 2.84 °C/W 2
Thermal Resistance, Junction to Ambient RθJA 110 °C/W Minimum pad of 2-oz copper 2
Thermal Resistance, Junction to Ambient RθJA 50 °C/W 1 in2 pad of 2-oz copper 2
Drain-Source Breakdown Voltage BVDSS -100 V VGS = 0 V, ID = -250 µA 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -100 V, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -80 V, TC = 125°C 3
Gate-Body Leakage Current, Forward IGSSF -100 nA VGS = -30 V, VDS = 0 V 3
Gate-Body Leakage Current, Reverse IGSSR 100 nA VGS = 30 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) -2 -4 V VDS = VGS, ID = -250 µA 3
Static Drain-Source On-Resistance RDS(on) 0.41 0.53 Ω VGS = -10 V, ID = -3.3 A 3
Input Capacitance Ciss 360 470 pF VDS = -25 V, VGS = 0 V, f = 1.0 MHz 3
Output Capacitance Coss 120 155 pF VDS = -25 V, VGS = 0 V, f = 1.0 MHz 3
Reverse Transfer Capacitance Crss 30 40 pF VDS = -25 V, VGS = 0 V, f = 1.0 MHz 3
Turn-On Delay Time td(on) 11 30 ns VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4) 3
Turn-On Rise Time tr 110 230 ns VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4) 3
Turn-Off Delay Time td(off) 20 50 ns VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4) 3
Turn-Off Fall Time tf 35 80 ns VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4) 3
Total Gate Charge Qg 12 15 nC VDS = -80 V, ID = -8.0 A, VGS = -10 V (Note 4) 3
Maximum Continuous Drain-Source Diode Forward Current IS -6.6 A 3
Maximum Pulsed Drain-Source Diode Forward Current ISM -26.4 A 3
Drain-Source Diode Forward Voltage VSD -4 V VGS = 0 V, IS = -6.6 A 3

CAD (KiCad official)

  • Symbol: FQD8P10TM
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: fqd8p10tm-etched.step / fqd8p10tm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqd8p10tm.step / fqd8p10tm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 febe9300d2c47b26, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF