component
FQD8P10TM
Public Made by Adomby adom
onsemi MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
fqd8p10tm: specified limits as data (metadata.characteristics, 35 rows from the datasheet)
2 files changed
+470−1
README.md+42@@ -21,6 +21,48 @@ FQD8P10TM from onsemi, in a DPAK. Pinout and pin descriptions extracted from the | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | -100 | V | | 2 |+| Drain Current - Continuous | ID | | | -6.6 | A | TC = 25°C | 2 |+| Drain Current - Continuous | ID | | | -4.2 | A | TC = 100°C | 2 |+| Drain Current - Pulsed | IDM | | | -26.4 | A | (Note 1) | 2 |+| Gate-Source Voltage | VGSS | | | 30 | V | | 2 |+| Single Pulsed Avalanche Energy | EAS | | | 150 | mJ | (Note 2) | 2 |+| Avalanche Current | IAR | | | -6.6 | A | (Note 1) | 2 |+| Repetitive Avalanche Energy | EAR | | | 4.4 | mJ | (Note 1) | 2 |+| Peak Diode Recovery dv/dt | dv/dt | | | -6 | V/ns | (Note 3) | 2 |+| Power Dissipation | PD | | | 2.5 | W | TA = 25°C | 2 |+| Power Dissipation | PD | | | 44 | W | TC = 25°C | 2 |+| Power Dissipation Derating | PD | | | 0.35 | W/°C | Derate above 25°C | 2 |+| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |+| Maximum Lead Temperature for Soldering Purposes | TL | | | 300 | °C | 1/8" from case for 5 seconds | 2 |+| Thermal Resistance, Junction to Case | RθJC | | | 2.84 | °C/W | | 2 |+| Thermal Resistance, Junction to Ambient | RθJA | | | 110 | °C/W | Minimum pad of 2-oz copper | 2 |+| Thermal Resistance, Junction to Ambient | RθJA | | | 50 | °C/W | 1 in2 pad of 2-oz copper | 2 |+| Drain-Source Breakdown Voltage | BVDSS | -100 | | | V | VGS = 0 V, ID = -250 µA | 3 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = -100 V, VGS = 0 V | 3 |+| Zero Gate Voltage Drain Current | IDSS | | | -10 | µA | VDS = -80 V, TC = 125°C | 3 |+| Gate-Body Leakage Current, Forward | IGSSF | | | -100 | nA | VGS = -30 V, VDS = 0 V | 3 |+| Gate-Body Leakage Current, Reverse | IGSSR | | | 100 | nA | VGS = 30 V, VDS = 0 V | 3 |+| Gate Threshold Voltage | VGS(th) | -2 | | -4 | V | VDS = VGS, ID = -250 µA | 3 |+| Static Drain-Source On-Resistance | RDS(on) | | 0.41 | 0.53 | Ω | VGS = -10 V, ID = -3.3 A | 3 |+| Input Capacitance | Ciss | | 360 | 470 | pF | VDS = -25 V, VGS = 0 V, f = 1.0 MHz | 3 |+| Output Capacitance | Coss | | 120 | 155 | pF | VDS = -25 V, VGS = 0 V, f = 1.0 MHz | 3 |+| Reverse Transfer Capacitance | Crss | | 30 | 40 | pF | VDS = -25 V, VGS = 0 V, f = 1.0 MHz | 3 |+| Turn-On Delay Time | td(on) | | 11 | 30 | ns | VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4) | 3 |+| Turn-On Rise Time | tr | | 110 | 230 | ns | VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4) | 3 |+| Turn-Off Delay Time | td(off) | | 20 | 50 | ns | VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4) | 3 |+| Turn-Off Fall Time | tf | | 35 | 80 | ns | VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4) | 3 |+| Total Gate Charge | Qg | | 12 | 15 | nC | VDS = -80 V, ID = -8.0 A, VGS = -10 V (Note 4) | 3 |+| Maximum Continuous Drain-Source Diode Forward Current | IS | | | -6.6 | A | | 3 |+| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | -26.4 | A | | 3 |+| Drain-Source Diode Forward Voltage | VSD | | | -4 | V | VGS = 0 V, IS = -6.6 A | 3 |+ ## CAD (KiCad official) - Symbol: `FQD8P10TM`
page.json+428−1@@ -150,6 +150,433 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "febe9300d2c47b26",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -6.6,+ "conditions": "TC = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -4.2,+ "conditions": "TC = 100°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -26.4,+ "conditions": "(Note 1)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single Pulsed Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "(Note 2)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -6.6,+ "conditions": "(Note 1)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Avalanche Energy",+ "symbol": "EAR",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 4.4,+ "conditions": "(Note 1)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": -6,+ "conditions": "(Note 3)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "TA = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 44,+ "conditions": "TC = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation Derating",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 0.35,+ "conditions": "Derate above 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "1/8\" from case for 5 seconds",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 2.84,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "Minimum pad of 2-oz copper",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "1 in2 pad of 2-oz copper",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -100,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = -250 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -100 V, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "VDS = -80 V, TC = 125°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current, Forward",+ "symbol": "IGSSF",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -30 V, VDS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current, Reverse",+ "symbol": "IGSSR",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 30 V, VDS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -2,+ "typ": null,+ "max": -4,+ "conditions": "VDS = VGS, ID = -250 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.41,+ "max": 0.53,+ "conditions": "VGS = -10 V, ID = -3.3 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 360,+ "max": 470,+ "conditions": "VDS = -25 V, VGS = 0 V, f = 1.0 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 120,+ "max": 155,+ "conditions": "VDS = -25 V, VGS = 0 V, f = 1.0 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 30,+ "max": 40,+ "conditions": "VDS = -25 V, VGS = 0 V, f = 1.0 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": 30,+ "conditions": "VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 110,+ "max": 230,+ "conditions": "VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 20,+ "max": 50,+ "conditions": "VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 35,+ "max": 80,+ "conditions": "VDD = -50 V, ID = -8.0 A, RG = 25 Ω (Note 4)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 12,+ "max": 15,+ "conditions": "VDS = -80 V, ID = -8.0 A, VGS = -10 V (Note 4)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Drain-Source Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -6.6,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Maximum Pulsed Drain-Source Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -26.4,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -4,+ "conditions": "VGS = 0 V, IS = -6.6 A",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +619,4 @@ "visibility": { "public": true }-}+}