component
FQD50N06-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFQD50N06-HXY
HXY MOSFET · MOSFETs · TO-252-2L
FQD50N06-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet rates VGS at ±20 V maximum. |
| 2 | D | passive | Drain terminal; rated VDS 60 V and continuous ID 50 A at TC=25℃ (VGS @ 10V), and it is the tab connected to the drain. |
| 3 | S | passive | Source terminal; the datasheet gives a continuous source current IS of 35 A and a pulsed source current ISM of 80 A for the body diode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 15 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 15 | 20 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 2.5 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 35 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 80 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25℃ | 50 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 25 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 7.4 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 6 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 90 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 39.2 | mJ | 1 | |||
| Avalanche Current | IAS | 28 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 45 | W | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 2.8 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
FQD50N06-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
fqd50n06-hxy-etched.step/fqd50n06-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fqd50n06-hxy.step/fqd50n06-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
c8ee349b75b424f7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).