# FQD4N60C-VB

**VBsemi Elec** · MOSFETs · TO-252

FQD4N60C-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±30 V absolute maximum, with threshold VGS(th) of 2.5 V min to 5.0 V max at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage rated 650 V maximum with continuous drain current of 4.5 A at TC = 25 °C and pulsed drain current of 18 A. |
| 3 | S | passive | Source; source terminal of the N-channel MOSFET, with continuous body diode current IS of 4 A maximum and pulsed diode current ISM of 21 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `FQD4N60C-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fqd4n60c-vb-etched.step` / `fqd4n60c-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fqd4n60c-vb.step` / `fqd4n60c-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/fqd4n60c-vb-datasheet.pdf) (9 pp, sha256 `3c081807eb382031`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fqd4n60c-vb-datasheet.pdf)